Axisymmetric Chemical-Mechanical Polishing Process Model by BEM

机译：BEM的轴对称化学机械抛光工艺模型

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This paper proposes an axisymmetric process model for chemical-mechanical polishing (CMP) constructed by the boundary element method (BEM) methodology. This model allows us to calculate the values of pressure acting on a wafer' s surface, displacement of polishing pads and polishing removal of CMP for the axisymmetric problems from the wafer-scale planarity and wafer edge effect issues to the cell-scale simulation for cylindrical structures.

机译：本文提出了一种用边界元法（BEM）方法构建的化学机械抛光（CMP）轴对称工艺模型。该模型使我们能够计算从晶片级平面度和晶片边缘效应问题到圆柱的单元尺度模拟的轴对称问题，作用在晶片表面上的压力，抛光垫的位移和CMP的抛光去除的压力值结构。

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来源
《Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore》|2002年|p.223-230|共8页
会议地点 Singapore(SG);Singapore(SG)
作者
Takafumi Yoshida;
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作者单位

YNT-jp.Com 2-10-17 Asae, Hikari, Yamaguchi 743-0021, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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3. An Analytical Model of Contact Pressure Caused by 2-D Wafer Topography in Chemical-Mechanical Polishing Process [J] . LixiaoWu ECS Journal of Solid State Science and Technology . 2012,第3期

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4. Three-Dimensional Chemical-Mechanical Polishing Process Model by BEM [C] . Takafumi Yoshida Third International Symposium on Chemical Mechanical Planarization(CMP) in Integrated Circuit(IC) Device Manufacturing, 3rd, Oct 20-22, 1999, Honolulu, Hawaii . 1999

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5. Macroscopic and microscopic modelling in chemical-mechanical polishing (CMP) process. [D] . Mao, Zhoujie. 2003

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6. KDP Aqueous Solution-in-Oil Microemulsion for Ultra-Precision Chemical-Mechanical Polishing of KDP Crystal [O] . Hui Dong, Lili Wang, Wei Gao, 2017

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Axisymmetric Chemical-Mechanical Polishing Process Model by BEM

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