• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >Fixed Abrasive CMP (FA-CMP) on STI Planarization for Logic Applications Beyond 0.13μm Technology Node
【24h】

Fixed Abrasive CMP (FA-CMP) on STI Planarization for Logic Applications Beyond 0.13μm Technology Node

机译：超过0.13μm技术节点的STI应用中的STI平面化固定磨料CMP（FA-CMP）

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

s In the present study, a comprehensive comparison of performances of STI-CMP was proposed. STI-CMP technologies evaluated here includes conventional oxide-CMP, HSS-CMP (High Selectivity Slurry CMP) and FA-CMP (Fixed-Abrasive CMP). From the results, step height and its with-in-wafer range of STI polished by FA-CMP is strongly competing to other CMP technologies. Besides, no significant relationship between dishing and feature size was found in this study which was opposite the results of conventional oxide-CMP and HSS-CMP. Finally, to have a whole qualification of CMP technologies on STI for both process ability and production controllability, a simple characterization scheme (SCS) was proposed in this study. It is evident FA-CMP is better than conventional oxide-CMP and HSS-CMP. Conclusively, the comparison of STI-CMP technologies is made and FA-CMP was better than other technologies in present study.
机译：■在本研究中，提出了STI-CMP性能的综合比较。这里评估的STI-CMP技术包括常规的氧化物CMP，HSS-CMP（高选择性浆料CMP）和FA-CMP（固定磨料CMP）。从结果来看，通过FA-CMP抛光的STI的台阶高度及其在晶片内的范围正在与其他CMP技术激烈竞争。此外，在该研究中没有发现凹陷与特征尺寸之间的显着关系，这与常规氧化物-CMP和HSS-CMP的结果相反。最后，为使CMP技术具有完整的STI能力，其工艺能力和生产可控性，本研究提出了一种简单的表征方案（SCS）。显然，FA-CMP优于常规的氧化物-CMP和HSS-CMP。最后，对STI-CMP技术进行了比较，FA-CMP在本研究中优于其他技术。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号