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Stress Controlled MBE-growth of GaN:Mg and GaN:Si

机译：应力控制的GaN：Mg和GaN：Si的MBE生长

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The stress in GaN thin films grown on sapphire is shown to be determined by lattice mismatch, by differences in thermal-expansion-coefficients and by the incorporation of point defects. It can be controlled by the buffer layer thickness, the buffer layer growth temperature, the V/III flux ratio, and by doping. It is argued that a Fermi-level dependence of defect formation energies affects the material stoichiometry and thereby lattice constants and stresses. We observed that stress relaxation occurred if the stresses exceeded a critical compressive or tensile stress value. The stress changes materials properties. As an example, it is demonstrated that the electron Hall mobility in GaN: Si can be increased with constant electron carrier concentration if large compressive stress is present.

机译：显示出在蓝宝石上生长的GaN薄膜中的应力是由晶格失配，热膨胀系数的差异以及点缺陷的结合所决定的。可以通过缓冲层的厚度，缓冲层的生长温度，V / III的通量比和掺杂来控制。认为缺陷形成能量的费米能级依赖性影响材料的化学计量，从而影响晶格常数和应力。我们观察到，如果应力超过临界压缩应力或拉伸应力值，则会发生应力松弛。应力会改变材料的性能。举例说明，如果存在较大的压应力，则可以在恒定的电子载流子浓度下提高GaN：Si中的电子霍尔迁移率。

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来源
《Nitride semiconductors》|1997年|217-222|共6页
会议地点 Boston MA(US)
作者
Y. Kim; R. Klockenbrink; C. Kisielowski; J. Krueger; D. Corlatan; Sudhir G.S.; Y. Peyrot; Y. Cho; M. Rubin; E. R. Weber;
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作者单位

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720;

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正文语种 eng
中图分类材料;
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2. Aluminum monolayers on Si (1 11) for MBE-growth of GaN [J] . X.Y. Liu, H.F. Li, A. Uddin, Journal of Crystal Growth . 2007,第1期

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3. Stress control and dislocation reduction in the initial growth of GaN on Si (111) substrates by using a thin GaN transition layer [J] . Wang Kun, Li Mengda, Yang Zhijian, CrystEngComm . 2019,第32期

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4. Stress Controlled MBE-growth of GaN:Mg and GaN:Si [C] . Symposium on nitride semiconductors . 1998

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Stress Controlled MBE-growth of GaN:Mg and GaN:Si

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