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ULTRA-SMOOTH ZnO BUFFER LAYERS ON (001) SAPPHIRE

机译：（001）蓝宝石上的超光滑ZnO缓冲层

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Using off-axis reactive rf sputtering, we have grown extremely smooth, nearly epitaxial, (001) oriented ZnO films on c-axis sapphire substrates. Atomic Force Microscopy was used to determine that these films are extremely smooth, having an rms roughness of only a few tenths of a nanometer. Based on high resolution x-ray diffraction (HXRD), the ZnO is highly oriented, with a rocking curve width of less than 400 arc seconds for the (006) diffraction peak, and only somewhat larger for the (112) reflection. HXRD Phi scans show that the ZnO (112) reflection is rotated in the a-b plane by 30 degrees from the sapphire (113) direction. These two measurements indicate excellent in-plane orientation. We are investigating the use of these buffer layers for subsequent GaN growth. Electrical resistivities of the films exceeded 100 kΩ-cm making ZnO a potential candidate as an insulating buffer layer.

机译：使用离轴反应射频溅射，我们在c轴蓝宝石衬底上生长了非常光滑，近乎外延的（001）取向的ZnO膜。原子力显微镜用于确定这些薄膜非常光滑，均方根粗糙度仅为十分之几纳米。基于高分辨率X射线衍射（HXRD），ZnO具有高度取向，对于（006）衍射峰，其摇摆曲线宽度小于400弧秒，而对于（112）反射，其摇摆曲线宽度仅稍大。 HXRD Phi扫描显示ZnO（112）反射在a-b平面中从蓝宝石（113）方向旋转了30度。这两个测量值表明极好的面内定向。我们正在研究将这些缓冲层用于随后的GaN生长。薄膜的电阻率超过100kΩ-cm，使得ZnO可以作为绝缘缓冲层。

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来源
《Nitride semiconductors》|1997年|289-294|共6页
会议地点 Boston MA(US)
作者
A. J. DREHMAN; S.-Q. WANG; P. W. YIP;
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作者单位

Air Force Research Laboratory, AFRL/SNHX, 80 Scott Dr., Hanscom AFB, MA 01731;

National Research Council Research Associate;

Air Force Research Laboratory, AFRL/SNHX, 80 Scott Dr., Hanscom AFB, MA 01731;

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机译：利用薄的C掺杂Ge缓冲层在Si（001）上生长的超光滑外延Ge
2. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer [J] . J. Mantey, W. Hsu, J. James, Applied Physics Letters . 2013,第19期

机译：利用薄的C掺杂Ge缓冲层在Si（001）上生长的超光滑外延Ge
3. Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate [J] . Zhiyun Zhang, Chonggao Bao, Shengqiang Ma, Applied Surface Science . 2011,第17期

机译：ZnO缓冲层的结晶度对沉积在c-蓝宝石衬底上的外延（ZnO：Al）/（ZnO：Ga）双层薄膜性能的影响
4. ULTRA-SMOOTH ZnO BUFFER LAYERS ON (001) SAPPHIRE [C] . Symposium on nitride semiconductors . 1998

机译：在（001）蓝宝石上的超光滑ZnO缓冲层
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

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6. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells [O] . Weiguang Yang, Farong Wan, Siwei Chen, 2009

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7. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer [O] . Xiao Bo, Liu Hongrui, Avrutin Vitaliy, 2009

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ULTRA-SMOOTH ZnO BUFFER LAYERS ON (001) SAPPHIRE

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