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SUBSTRATE SURFACE TREATMENTS AND 'CONTROLLED CONTAMINATION' IN GaN / SAPPHIRE MOCVD

机译：GaN /蓝宝石MOCVD中的基体表面处理和“受控污染”

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We have used atomic force microscopy (AFM) to study the effect of common substrate surface treatments for the metal-organic chemical vapor deposition (MOCVD) of GaN on sapphire. It appears that contaminants play a major role in the surface chemistry and strongly influence the morphology of the treated surfaces. In order to investigate the role of these contaminants, we have introduced the concept of "controlled contamination" (CC), namely, exposure of the sapphire surfaces to controlled amounts of potential contaminants in-situ and investigation of the resulting sapphire morphology. The results showed that sapphire, considered to be a very stable oxide surface, is clearly reactive in the GaN MOCVD chemical environment at the high temperatures (HT) employed, allowing us to use CC for obtaining sapphire substrates with controlled roughness. Nevertheless, epitaxial growth using the two-step GaN MOCVD process appears to be very robust and practically insensitive to the (submicron-scale) substrate morphology.

机译：我们已经使用原子力显微镜（AFM）来研究常见衬底表面处理对蓝宝石上GaN的金属有机化学气相沉积（MOCVD）的影响。似乎污染物在表面化学中起主要作用，并强烈影响处理过的表面的形态。为了研究这些污染物的作用，我们引入了“受控污染”（CC）概念，即将蓝宝石表面暴露于受控量的潜在潜在污染物中，并研究最终的蓝宝石形态。结果表明，被认为是非常稳定的氧化物表面的蓝宝石在所采用的高温（HT）下在GaN MOCVD化学环境中具有明显的反应性，从而使我们能够使用CC获得具有受控粗糙度的蓝宝石衬底。尽管如此，使用两步GaN MOCVD工艺进行的外延生长似乎非常坚固，并且对（亚微米级）衬底形态几乎不敏感。

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来源
《Nitride semiconductors》|1997年|57-62|共6页
会议地点 Boston MA(US)
作者
YUVAL GOLAN; PAUL FINI; STEVEN P. DENBAARS; JAMES S. SPECK;
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作者单位

Materials Department, University of California, Santa Barbara, CA 93106;

Materials Department, University of California, Santa Barbara, CA 93106;

Materials Department, University of California, Santa Barbara, CA 93106;

Materials Department, University of California, Santa Barbara, CA 93106;

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正文语种 eng
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2. Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates [J] . X.Q. Shen, M. Shimizu, H. Okumura, Journal of Crystal Growth . 2009,第7期

机译：用rf-MBE和MOCVD在邻域蓝宝石（0001）衬底上生长的GaN膜的表面形貌比较
3. The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films [J] . Seong-Woo Kim, Hideo Aida, Toshimasa Suzuki Physica Status Solidi. C, Conferences and critical reviews . 2004,第10期

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4. SUBSTRATE SURFACE TREATMENTS AND 'CONTROLLED CONTAMINATION' IN GaN / SAPPHIRE MOCVD [C] . Symposium on nitride semiconductors . 1998

机译：GaN / Sapphire Mocvd中的衬底表面处理和“受控污染”
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

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6. Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate [O] . Lei Zhang, Jiaoxian Yu, Xiaopeng Hao, -1

机译：HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响
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SUBSTRATE SURFACE TREATMENTS AND 'CONTROLLED CONTAMINATION' IN GaN / SAPPHIRE MOCVD

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