LOCALIZED DONORS IN GaN: SPECTROSCOPY USING LARGE PRESSURES

著录项

• 来源
  《Nitride semiconductors》|1997年|489-500|共12页
• 会议地点 Boston MA(US)
• 作者

  C. WETZEL; H. AMANO; I. AKASAKI; T. SUSKI; J.W. AGER; E.R. WEBER; E.E. HALLER; B.K. MEYER;

  展开▼
• 作者单位

  High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA;

  High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan;

  High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan;

  High Pressure Research Center, Warsaw, Poland;

  Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA;

  1. Physics Institute, Justus-Liebig-University Gi;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词