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DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE

机译：通过原位控制GSMBE中的表面重构来使GaN膜质量发生剧烈变化

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GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH_3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H_2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

机译：使用气态分子束外延（GSMBE），以氨（NH_3）为氮源，在6H-SiC（0001）衬底上进行GaN生长。根据生长条件，在GaN生长期间观察到两种反射高能电子衍射（RHEED）图案，分别为（1×1）和（2×2）。通过仔细的RHEED研究，证实（1×1）模式对应于H_2相关的富氮表面，而（2×2）模式则源自富Ga表面。通过X射线衍射（XRD），光致发光（PL）和原子力显微镜（AFM）表征，发现GaN质量在不同的RHEED模式下急剧变化。在（1×1）RHEED模式下生长的GaN膜的质量比在（2×2）模式下生长的GaN膜更好。

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《Nitride semiconductors》|1997年|223-226|共4页
会议地点 Boston MA(US)
作者
X.Q.SHEN; S.TANAKA; S.IWAI; Y.AOYAGI;
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The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan;

The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan;

The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan;

The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan;

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1. jEffect of the nucelation layer depositoin temperature on the nature of defects in GSMBE GaN films [J] . P. Vennegues, N. Grandjean, J. Massies Journal of Crystal Growth . 1999,第MAY期

机译：j成核层沉积温度对GOMBE GaN薄膜缺陷性质的影响
2. Unusual Antibacterial Property of Mesoporous Titania Films: Drastic Improvement by Controlling Surface Area and Crystallinity [J] . Hamid Oveisi, Simin Rahighi, Xiangfen Jiang, Chemistry, an Asian journal . 2010,第9期

机译：中孔二氧化钛薄膜的非同寻常的抗菌性能：通过控制表面积和结晶度而大幅度改善
3. Influence of in-situ deposited SiN_x interlayer on crystal quality of GaN epitaxial films [J] . Fan Teng, Jia Wei, Tong Guangyun, Superlattices and microstructures . 2018,第MAY期

机译：原位沉积SiN_x中间层对GaN外延膜晶体质量的影响
4. DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE [C] . Symposium on nitride semiconductors . 1998

机译：通过原位控制GASMBE控制表面重建的GAN薄膜质量的剧烈变化
5. In-situ Surface Enhanced Raman Spectroscopy Investigation of the Surface Films on Alloy 600 and Alloy 690 in Pressurized Water Reactor-Primary Water. [D] . Wang, Feng. 2012

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6. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates [O] . Kai Huang, Qi Jia, Tiangui You, -1

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DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE

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