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BULK GaN CRYSTAL WITH LOW DEFECT DENSITY GROWN BY HYDRIDE VAPOR PHASE EPITAXY

机译：氢化物蒸气相表观生长的低缺陷密度的块状GaN晶体

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A new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×10~7 cm~(-2). The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

机译：描述了一种通过氢化物气相外延（HVPE）生长厚GaN层的新方法。选择性生长在生长开始时进行。选择性生长的小面结构的合并使得有可能在整个基板上获得平坦的表面。结果，在2英寸直径的蓝宝石衬底上，具有镜面状表面的无裂纹GaN膜成功地生长到甚至约100μm的厚度。扩展的缺陷密度低至6×10〜7 cm〜（-2）。基于TEM观察讨论了位错的还原机理。 FIELO GaN的高光学性能已通过5 K光致发光和反射率测量得到证实。

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来源
《Nitride semiconductors》|1997年|233-244|共12页
会议地点 Boston MA(US)
作者
A. Usui;
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作者单位

Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, JAPAN;

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原文格式 PDF
正文语种 eng
中图分类材料;
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1. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method [J] . Kazunobu Kojima, Yusuke Tsukada, Erika Furukawa, Applied physics express . 2015,第9期

机译：通过氢化物气相外延在氨热法合成的GaN籽晶上生长的具有低点缺陷浓度的低电阻率m面独立式GaN衬底
2. Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy [J] . Chichibu S. F. Journal of Applied Physics . 2012,第10期

机译：在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光，正电子ni灭和Al0.23Ga0.77N / GaN异质结构生长研究
3. Time-resolved photoluminescence, positron annihilation, and Al_0.23Ga_0.77N/ GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy [J] . S. F. Chichibu, K. Hazu, Y. Ishikawa, Journal of Applied Physics . 2012,第10期

机译：在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光，正电子ni灭和Al_0.23Ga_0.77N / GaN异质结构生长研究
4. BULK GaN CRYSTAL WITH LOW DEFECT DENSITY GROWN BY HYDRIDE VAPOR PHASE EPITAXY [C] . Symposium on nitride semiconductors . 1998

机译：散装GaN晶体，具有低缺陷密度的氢化物气相外延
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

机译：用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
6. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy [O] . Chi-Tsung Tasi, Wei-Kai Wang, Tsung-Yen Tsai, 2017

机译：通过氢化物气相外延减少在纳米级蓝宝石衬底上生长的AlGaN中的缺陷
7. Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template [O] . Gogova D., Kasic A., Larsson H., 2004

机译：在两步外延横向过长GaN模板上通过氢化物汽相外延生长无应变的块状GaN

BULK GaN CRYSTAL WITH LOW DEFECT DENSITY GROWN BY HYDRIDE VAPOR PHASE EPITAXY

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