PULSED OPERATION OF CLEAVED-FACET InGaN LASER DIODES

著录项

• 来源
  《Nitride semiconductors》|1997年|1197-1202|共6页
• 会议地点 Boston MA(US)
• 作者

  R.K. Sink; A.C. Abare; P. Kozodoy; M.P. Mack; S. Keller; L.A. Coldren; S.P. DenBaars; J.E. Bowers;

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• 作者单位

  ECE Department, University of California, Santa Barbara, CA 93106;

  ECE Department, University of California, Santa Barbara, CA 93106;

  ECE Department, University of California, Santa Barbara, CA 93106;

  Materials Department, University of California, Santa Barbara, CA 93106;

  Materials Department, University of California, Santa Barbara, CA 93106;

  ECE Department, University of California, Santa Barbara, CA 93106;

  Materials Department, University of California, Santa Barbara, CA 93106;

  ECE Department, University of California, Santa Barbara, CA 93106;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词