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ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS

机译：低缺陷密度GaN层的有机气相相表位

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Lateral epitaxial overgrowth (LEO) of GaN layers has been achieved on 3 μm wide and 7 μm spaced stripe windows contained in SiO_2 masks on GaN/AlN/6H-SiC(0001) substrates via organometallic vapor phase epitaxy (OMVPE). The extent and microstructural characteristics of lateral overgrowth were a complex function of stripe orientation, growth temperature and triethylgallium (TEG) flow rate. A high density of threading dislocations, originating from the interface of the underlying GaN with the A1N buffer layer, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The second lateral epitaxial overgrowth layers were obtained on the first laterally grown layers by the repetition of SiO_2 deposition, lithography and lateral epitaxy.

机译：GaN层的横向外延过生长（LEO）已通过有机金属气相外延（OMVPE）在GaN / AlN / 6H-SiC（0001）衬底上的SiO_2掩模中包含的3μm宽和7μm间隔的条形窗口中实现。横向过度生长的程度和微观结构特征是条纹取向，生长温度和三乙基镓（TEG）流量的复杂函数。在窗口区域中生长的GaN中包含源自下面的GaN与AlN缓冲层的界面的高密度的位错。相反，过度生长区的位错密度非常低。通过重复进行SiO_2沉积，光刻和横向外延，在第一横向生长层上获得第二横向外延生长层。

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《Nitride semiconductors》|1997年|301-306|共6页
会议地点 Boston MA(US)
作者
O.H. Nam; T.S. Zheleva; M.D. Bremser; D.B. Thomson; R.F. Davis;
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Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907;

Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907;

Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907;

Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907;

Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907;

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1. Efficacy of single and double SiN_x interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy [J] . F. Yun, Y. -T. Moon, Y. Fu, Journal of Applied Physics . 2005,第12期

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2. Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy [J] . Mutsumi SUGIYAMA, Taiki NOSAKA, Tomonori SUZUKI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第3期

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3. X-ray characterization of composition and relaxation of AlxGa1-xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy [J] . Tweedie James, Collazo Ramon, Rice Anthony, Journal of Applied Physics . 2010,第4期

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4. ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS [C] . Symposium on nitride semiconductors . 1998

机译：低缺损密度GaN层的有机金属气相横向外延
5. Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy. [D] . Jun, Sung Won. 2001

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7. Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy [O] . Yun F., Moon Y.-T., Fu Y., 2005

机译：单和双SiNx中间层对通过有机金属气相外延生长的GaN覆盖层中的缺陷减少的功效

ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS

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