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InGaN QUANTUM DOTS FABRICATED ON AlGaN SURFACES -GROWTH MECHANISM AND OPTICAL PROPERTIES

机译：AlGaN表面上的InGaN量子点-生长机理和光学性质

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We demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ~10nm and ~5nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of Ib_xGa_(1-x)N QDs is controlled from x=～0.22 to～0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

机译：我们通过自组装InGaN量子点（QD）展示了光致发光，这些量子点是通过金属有机化学气相沉积在AlGaN表面上人工制造的。通过在AlGaN表面上使用抗表面活性剂硅，通过从阶跃流向三维岛形成的生长模式转变成功地制造了InGaN QD。通过原子力显微镜（AFM）估计制造的InGaN QD的直径和高度分别为〜10nm和〜5nm。通过改变QD的生长温度，将Ib_xGa_（1-x）N QD的铟摩尔分数从x =〜0.22控制到〜0.52。即使在室温下，从嵌入GaN覆盖层的InGaN QD中也观察到强烈的光致发光。另外，光致发光峰能量的与温度有关的能量位移显示出定位行为。

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来源
《Nitride semiconductors》|1997年|737-742|共6页
会议地点 Boston MA(US)
作者
H. HIRAYAMA; S. TANAKA; P. RAMVALL; Y. AOYAGI;
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作者单位

The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2-1, Wako- shi, Saitama, 351- 01, Japan;

The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2-1, Wako- shi, Saitama, 351- 01, Japan;

The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2-1, Wako- shi, Saitama, 351- 01, Japan;

The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2-1, Wako- shi, Saitama, 351- 01, Japan;

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正文语种 eng
中图分类材料;
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2. Fabrication of self- assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant [J] . Hideki Hirayama, Satoru Tanaka, Yoshinobu Aoyagi Microelectronic Engineering . 1999,第3a4期

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3. Nonlinear optical properties of the wurtzite InGaN/AlGaN parabolic quantum dot [J] . Chen T., Xie W., Liang S. Nano: brief reports and reviews . 2013,第2期

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4. InGaN QUANTUM DOTS FABRICATED ON AlGaN SURFACES -GROWTH MECHANISM AND OPTICAL PROPERTIES [C] . Symposium on nitride semiconductors . 1998

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机译：金属有机化学气相沉积法制备3D生长多层InGaN / GaN量子点的结构和光学性质

InGaN QUANTUM DOTS FABRICATED ON AlGaN SURFACES -GROWTH MECHANISM AND OPTICAL PROPERTIES

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