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EFFECT OF NITRIDATION AND BUFFER IN GaN FILMS GROWN ON A-PLANE (11-20) SAPPHIRE

机译：GaN薄膜中氮化和缓冲对A平面（11-20）蓝宝石的影响

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摘要

In this paper, we report on a systematic study of GaN growth on the A-plane sapphire by plasma-assisted MBE. The effects of plasma nitridation of the substrate and the growth of a low temperature GaN buffer on the structure and optoelectronic properties of the films are addressed. TEM studies indicate that films grown on substrates which were not nitridated prior to growth have a significant fraction of zinc-blende domains and poor orientational relation with the substrate. On the contrary, nitridation leads to films with superior structural and optoelectronic properties. The low temperature GaN buffer, grown on nitridated substrates, was found to also have a pronounced effect on the optoelectronic properties of the GaN films, especially in those with low carrier concentrations. The correlation between TEM and photoluminescence studies suggest that the transition at 3.27 eV can be attributed to the cubic domains in the films.
机译：在本文中，我们报道了通过等离子体辅助MBE在A面蓝宝石上进行GaN生长的系统研究。解决了衬底的等离子体氮化和低温GaN缓冲液的生长对薄膜的结构和光电性能的影响。 TEM研究表明，在未生长之前被氮化的衬底上生长的膜具有很大一部分的锌-闪锌矿区，并且与衬底的取向关系差。相反，氮化导致膜具有优异的结构和光电性能。发现在氮化衬底上生长的低温GaN缓冲液对GaN薄膜的光电性能也有显着影响，尤其是在载流子浓度较低的情况下。 TEM和光致发光研究之间的相关性表明，在3.27 eV处的跃迁可以归因于薄膜中的立方晶畴。

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  • 来源
    《Nitride semiconductors》|1997年|51-56|共6页
  • 会议地点 Boston MA(US)
  • 作者

    D. DOPPALAPUDI; E. ILIOPOULOS; S.N. BASU; T.D. MOUSTAKAS;

  • 作者单位

    Center for Photonics Research, Dept. of Manufacturing Engineering, Boston University, Boston, MA 02215;

    Dept. of Electrical Engineering, Boston University, Boston, MA 02215;

    Center for Photonics Research, Dept. of Manufacturing Engineering, Boston University, Boston, MA 02215;

    Dept. of Electrical Engineering, Boston University, Boston, MA 02215;

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  • 正文语种 eng
  • 中图分类 材料;
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