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EFFECTS OF PIEZOELECTRIC FIELDS IN GaInN/GaN AND GaN/AlGaN HETEROSTRUCTURES AND QUANTUM WELLS

机译：GaInN / GaN和GaN / AlGaN异质结构和量子阱中的压电场效应

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The effects of piezoelectric fields on the static and dynamic optical properties of GalnN/GaN and GaN/AlGaN double heterostructures and single quantum wells are studied by time-resolved photoluminescence. We find a strong increase of the luminescence decay time of the dominating transition with well thickness by several orders of magnitude. For well thicknesses larger than about 5 nm, two emission lines with strongly differing decay times are observed, which are attributed to spatially direct and indirect transitions. Our experimental findings are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells.

机译：通过时间分辨光致发光研究了压电场对GalnN / GaN和GaN / AlGaN双异质结构和单量子阱的静态和动态光学性质的影响。我们发现，随着阱厚度的增加，主要跃迁的发光衰减时间增加了几个数量级。对于大于约5 nm的阱厚度，观察到两条发射线的衰减时间差异很大，这归因于空间上的直接和间接跃迁。我们的实验结果始终由基于应变纤锌矿量子阱中压电场的定量模型来解释。

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《Nitride semiconductors》|1997年|513-518|共6页
会议地点 Boston MA(US)
作者
JIN SEO IM; H. KOLLMER; J. OFF; A. SOHMER; F. SCHOLZ; A. HANGLEITER;
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作者单位

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

4. Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany;

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4. EFFECTS OF PIEZOELECTRIC FIELDS IN GaInN/GaN AND GaN/AlGaN HETEROSTRUCTURES AND QUANTUM WELLS [C] . Symposium on nitride semiconductors . 1998

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EFFECTS OF PIEZOELECTRIC FIELDS IN GaInN/GaN AND GaN/AlGaN HETEROSTRUCTURES AND QUANTUM WELLS

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