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BREAKDOWN BEHAVIOR OF AlGaN MSM UV PHOTODETECTORS

机译：AlGaN MSM紫外光检测器的击穿性能

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摘要

GaN is an attractive wide bandgap semiconductor material for optoelectronic device applications at blue and UV wavelengths. The breakdown behavior of interdigital MSM type of AlGaN UV photodetectors (PDs) are reported here. The AlGaN was deposited using MOCVD technique. The MSM devices were fabricated using undoped AlGaN (Al composition is 0.13) epitaxial layer on sapphire substrate. Au/Ti metallization was patterned as metal electrodes on AlGaN. Very high UV responsivity of the devices was achieved at DC bias voltage in the range of 60-140V depending on the device dimensions. The breakdown voltage exhibits a negative temperature coefficient. The relationship between the breakdown voltage and device dimensions has been investigated using both of I-V, C-V characteristics. It has been found that annealing of the contact modifies the device characteristics, in particular, the breakdown behaviors.
机译：GaN是一种有吸引力的宽带隙半导体材料，适用于蓝光和UV波长的光电子器件应用。此处报告了叉指MSM型AlGaN UV光电探测器（PD）的击穿行为。使用MOCVD技术沉积AlGaN。 MSM器件是在蓝宝石衬底上使用未掺杂的AlGaN（Al成分为0.13）外延层制造的。将金/钛金属化图案化为AlGaN上的金属电极。根据器件尺寸，在60-140V的DC偏置电压下，器件具有很高的UV响应度。击穿电压呈现负温度系数。击穿电压与器件尺寸之间的关系已使用I-V，C-V特性进行了研究。已经发现，接触的退火改变了器件的特性，特别是击穿行为。

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  • 来源
    《Nitride semiconductors》|1997年|1131-1135|共5页
  • 会议地点 Boston MA(US)
  • 作者

    S. LIANG; Y. LIU; Y. LU; M. SCHURMAN; C.A. TRAN; I. FERGUSON;

  • 作者单位

    ECE Department, Rutgers University, Piscataway, NJ 08855-0909;

    ECE Department, Rutgers University, Piscataway, NJ 08855-0909;

    ECE Department, Rutgers University, Piscataway, NJ 08855-0909;

    EMCORE Corporation, Somerset, NJ 08873;

    EMCORE Corporation, Somerset, NJ 08873;

    EMCORE Corporation, Somerset, NJ 08873;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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