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首页> 外文会议>Nitride semiconductors >AlN/GaN AND AlGaN/GaN HETEROSTRUCTURES GROWN BY HVPE ON SiC SUBSTRATES
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AlN/GaN AND AlGaN/GaN HETEROSTRUCTURES GROWN BY HVPE ON SiC SUBSTRATES

机译：HVPE在SiC衬底上生长的AlN / GaN和AlGaN / GaN异质结构

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摘要

GaN, AlN and AlGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AlN/GaN and AlGaN/GaN structures were investigated. AlGaN growth rate was about 1 μm/min. The thickness of the AlGaN layers ranged from 0.5 to 5 urn. The AlN concentration in AlGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.rnElectrical measurements performed on AlGaN/GaN/SiC samples indicated that undoped AlGaN layers are conducting at least up to 50 mol. % of AlN.
机译：通过氢化物气相外延生长GaN，AlN和AlGaN层。将6H-SiC晶片用作衬底。研究了AlN / GaN和AlGaN / GaN结构的性能。 AlGaN的生长速度为约1μm/ min。 AlGaN层的厚度为0.5至5μm。 AlGaN层中的AlN浓度在9至67摩尔之间变化。 ％。通过电子束显微分析，俄歇电子能谱，X射线衍射和阴极发光对样品进行了表征。对AlGaN / GaN / SiC样品进行的电子测量表明，未掺杂的AlGaN层至少导电至50 mol。 AlN的百分比。

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  • 来源
    《Nitride semiconductors》|1997年|245-249|共5页
  • 会议地点 Boston MA(US)
  • 作者

    Yu.V. MELNIK; A.E. NIKOLAEV; S.I. STEPANOV; A.S. ZUBRILOV; I.P. NIKITINA; K.V. VASSILEVSKI; D.V. TSVETKOV; A.I. BABANIN; Yu.G. MUSIKHIN; V.V. TRETYAKOV; V.A. DMITRIEV;

  • 作者单位

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia Crystal Growth Research Center, 12H, 29 Ligovskii pr., St.-Petersburg 193036, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia TDI, Inc., Bethesda, MD 20814, USA;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia;

    Ioffe Institute, 26 Pol;

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  • 正文语种 eng
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