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FABRICATION AND OPTICAL PUMPING OF LASER CAVITIES MADE BY CLEAVING AND WET CHEMICAL ETCHING

机译:激光切割和湿法化学蚀刻制成的激光腔的制造和光学泵浦

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摘要

We report on fabrication and characterization of cleaved laser facets and photo-electrochemically wet etched laser facets in Ill-Nitrides grown by MOVPE on c-plane sapphire. The roughness of the cleaved facets in the InGaN/GaN double heterostructure (DH) laser cavities with a 1000-A-thick active region is ≈25 ran, while that of the wet etched GaN facets is ≈100 nm. A theoretical model is developed for the maximum allowable laser facet roughness, which yields a value of 18 nm for uncoated GaN and 22 nm for the uncoated DH. Optically pumped laser action at room temperature is demonstrated in the cleaved DH laser cavities. Above the incident threshold pumping power of 1.3 MW/cm~2, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized. Wet chemical etching a 1-mm-long laser cavity into the GaN homostructure is found to increase the differential quantum efficiency by a factor of 2.
机译:我们报告了裂隙激光刻面和MOVPE在c平面蓝宝石上生长的III-氮化物中光电化学湿法刻蚀的激光刻面的制造和表征。具有1000A厚有源区的InGaN / GaN双异质结构(DH)激光腔中的劈开面的粗糙度为≈25纳米,而湿法蚀刻的GaN刻面的粗糙度为≈100nm。针对最大允许激光刻面粗糙度建立了理论模型,对于未涂覆的GaN而言,其值为18 nm;对于未涂覆的DH,其值为22 nm。在劈开的DH激光腔中证明了在室温下的光泵浦激光作用。高于入射阈值泵浦功率1.3 MW / cm〜2,差分量子效率提高34倍,发射线宽减小至13.5 meV,输出变为高度TE极化。发现将1mm长的激光腔体湿法化学刻蚀成GaN均匀结构可以使差分量子效率提高2倍。

著录项

  • 来源
    《Nitride semiconductors》|1997年|1009-1014|共6页
  • 会议地点 Boston MA(US)
  • 作者单位

    Physics Department, Boston University, Boston, MA 02215;

    ECE department, Boston University, Boston, MA 02215;

    ECE department, Boston University, Boston, MA 02215;

    Advanced Technology Materials, Inc., Danbury, CT 06810-4169;

    Advanced Technology Materials, Inc., Danbury, CT 06810-4169;

    Advanced Technology Materials, Inc., Danbury, CT 06810-4169;

    Advanced Technology Materials, Inc., Danbury, CT 06810-4169;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

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