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首页> 外文会议>Nitride semiconductors >GaN ROOM TEMPERATURE EXCITON SPECTRA BY PHOTOVOLTAIC MEASUREMENT
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GaN ROOM TEMPERATURE EXCITON SPECTRA BY PHOTOVOLTAIC MEASUREMENT

机译：光伏测量的GaN室温温度激子谱

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摘要

Exciton absorption peak has been clearly observed at room temperature by photovoltaic spectra, on a GaN layer grown on (0001)-plane Sapphire by metalorganic chemical vapor deposition. From the spectra, we obtained A and B exciton transition energies to be 3.401 eV, 3.408 eV, and the energy gap to be 3.426 eV in wurztite GaN, respectively. We have also performed photovoltaic measurements with various incidence angles of light, and observed the polarization behavior of exciton absorption in GaN. Finally, we used UV-polarizer to further confirm the polarization properties of GaN. In conjuction with previous room temperature photoreflectance measurements, this work provide direct and reliable assessment of the excitonic properties and crystal quality of GaN semiconductor layers.
机译：通过光伏光谱，在室温下通过金属有机化学气相沉积法在（0001）面蓝宝石上生长的GaN层上清楚地观察到激子吸收峰。从光谱中，我们得到了纤锌矿型GaN的A和B激子跃迁能分别为3.401 eV，3.408 eV和能隙为3.426 eV。我们还使用各种入射角进行了光伏测量，并观察了GaN中激子吸收的极化行为。最后，我们使用紫外偏振器进一步确定了GaN的偏振特性。结合以前的室温光反射率测量，这项工作为GaN半导体层的激子特性和晶体质量提供了直接而可靠的评估。

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  • 来源
    《Nitride semiconductors》|1997年|593-598|共6页
  • 会议地点 Boston MA(US)
  • 作者

    W. Liu; M.F. Li; S.J. Chua; Y.H. Zhang; K. Uchida;

  • 作者单位

    Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260;

    Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260;

    Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260;

    Institute of Microelectronics, National University of Singapore, Singaporel 19260;

    Nippon Sanso. Co. Tsukuba, Lab, 10 Ohkubo Tsukuba, Ibaraki 300-26, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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