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VALENCE BAND PARAMETERS FOR WURTZITE GaN and InN

机译：伍尔兹GaN和InN的价带参数

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Theoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the k_z and the in-plane k_x-k_y plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.

机译：采用InGaN的量子阱激光器的理论研究和设计需要GaN和InN的材料参数。但是，InN的类似于Luttinger的有效质量参数目前不可用。在这项工作中，我们从使用经验伪电势方法（EPM）计算的电子能带结构中提取了纤锌矿GaN和InN的有效质量参数。我们获得了在k_z和面内k_x-的Γ点处的有效质量的电子和空穴（包括重（HH），轻（LH）和晶体场分裂（CH）空穴）。 k_y平面）方向使用抛物线拟合。此外，使用6×6有效质量哈密顿量和k.p方法得出孔的有效质量参数。我们的结果对于包含InGaN的宽间隙氮化物基半导体激光器的材料设计非常有用。

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来源
《Nitride semiconductors》|1997年|923-928|共6页
会议地点 Boston MA(US)
作者
Y. C. YEO; T. C. CHONG; M. F. LI;
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作者单位

Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, SI 19260, Singapore;

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1. Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy [J] . P. Specht, J.C. Ho, X. Xu, Solid State Communications . 2005,第5期

机译：价电子能量损耗光谱法测定纤锌矿GaN和InN中的能带跃迁
2. Critical points of the band structure and valence band ordering at the Gamma point of wurtzite InN [J] . Goldhahn R, Schley P, Winzer AT, Journal of Crystal Growth . 2006,第2期

机译：纤锌矿InN Gamma点的能带结构临界点和价带有序
3. Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations [J] . P. D. C. King, T. D. Veal, C. F. McConville, Physical review . 2008,第11期

机译：X射线光电子能谱和第一性原理计算得出的闪锌矿和纤锌矿InN的价态带密度
4. VALENCE BAND PARAMETERS FOR WURTZITE GaN and InN [C] . Symposium on nitride semiconductors . 1998

机译：维特塔特甘套房的价频段参数
5. Optical anisotropy in Wurtzite InN/GaN disk-in-wire structures. [D] . Merrill, Ky. 2012

机译：纤锌矿型InN / GaN线内圆盘结构中的光学各向异性。
6. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy [O] . Zhiwei Li, Biao Zhang, Jun Wang, 2011

机译：X射线光电子能谱法测量纤锌矿InN / SrTiO3异质结的价带偏移
7. First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [O] . Burton B. P., van de Walle A., Kattner U. 2006

机译：纤锌矿结构系统AlN–GaN，GaN–InN和AlN–InN的第一原理相图计算

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