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Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

机译：GaN / AlN和GaAs / AlAs量子阱中的电子声子散射

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We have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AIN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electron-interface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

机译：我们已经研究了对GaN / AIN和GaAs / AlAs量子阱中的声子光谱和电子纵向光学声子散射的影响。已经为两个系统计算了声子模式和电势。给出了由于电子界面声子相互作用而产生的发射结果。我们将讨论两个系统中由于修改的LO-声子散射而引起的弛豫时间和电子迁移率的含义。

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来源
《Nitride semiconductors》|1997年|599-604|共6页
会议地点 Boston MA(US)
作者
T. F. Forbang; C. R. McIntyre;
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作者单位

Institute for Computational Sciences and Informatics, George Mason University, Fairfax, VA 22030;

Department of Physics and Astronomy, MS 3F3 George Mason University, Fairfax, VA 22030;

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原文格式 PDF
正文语种 eng
中图分类材料;
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1. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well [J] . Mohamed Souhail Kehili, Rihab Sellami, Afef Ben Mansour, Optical and quantum electronics . 2020,第6期

机译：AlGaAs / GaAs / Algaas井中GASB量子环的线性和非线性光学性能的操纵，ALAS / GAAS / INGAAS / ALAS双量子阱
2. APS -APS March Meeting 2017 - Event - Electron-phonon scattering rates in GaAs and AlAs under hydrostatic pressure [J] . Nandan Tandon, L. R. Ram-Mohan, John D. Albrecht Bulletin of the American Physical Society . 2017,第4期

机译：APS -APS 3月会议2017 - 事件 - 在静水压力下GaAs和Alas的Electron-Phonon散射率
3. Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices [J] . V. A. Volodin Optoelectronics, Instrumentation and Data Processing . 2014,第3期

机译：GaAs / AlAs掺杂超晶格中的电子声子相互作用和拉曼散射
4. Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells [C] . Symposium on nitride semiconductors . 1998

机译：GaN / ALN和GAAs / ALAS量子孔中的电子 - 声子散射
5. Optical Properties of Ultrathin In(Ga)As/GaAs and In(Ga)N/GaN Quantum Wells [D] . Maidaniuk, Yurii. 2020

机译：超薄In（Ga）AS / GaAs和（Ga）n / GaN量子阱的光学性质
6. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces [O] . Alexander Milekhin, Nikolay Yeryukov, Alexander Toropov, 2012

机译：在（001）和（311）B GaAs表面上生长的InAs / AlAs量子点超晶格的拉曼散射
7. Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers [O] . A. A. Bykov, I. S. Strygin, A. V. Goran, 2020

机译：运输散射时间和量子寿命对调制掺杂单个GaAs量子井中的二维电子气密度与ALAS / GaAs短期超晶格屏障
8. Resonant generation of nonequilibrium phonons in GaAs/AlAs quantum wells via intersubband scattering [R] . Su, Z. P. , Ruf, T. , Wald, K. R. , 1994

机译：通过子带间散射在Gaas / alas量子阱中共振产生非平衡声子

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

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