ELECTRON IRRADIATION INDUCED TRAP IN n-TYPE GaN

机译：n型GaN中的电子辐照诱导陷阱

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A 1-MeV-electron-irradiation (EI) induced trap at E_c-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 10~(16) cm~(-3) and 1.3 × 10~(17) cm~(-3), respectively. Up to an irradiation dose of 1 × 10~(15) cm~(-2), the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the El-induced trap is produced at a rate of at least 0.2 cm~(-1). The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

机译：通过在肖特基势垒二极管上进行的深层瞬态光谱（DLTS）测量，在两种有机金属化学气相沉积法上制造的n型GaN中，发现了E_c-0.18 eV处的1-MeV电子辐射（EI）诱导的陷阱。沉积和在蓝宝石上生长的氢化物汽相外延材料。两种材料的300 K载流子浓度分别为2.3×10〜（16）cm〜（-3）和1.3×10〜（17）cm〜（-3）。直到1×10〜（15）cm〜（-2）的辐照剂量，GaN层中的电子浓度和预先存在的陷阱都不会受到显着影响，而El诱发的陷阱的产生速率为至少0.2 cm〜（-1）两种材料中的DLTS峰可能略有偏移，这可能是由于电场效应引起的。与理论的比较表明，该缺陷很可能与N空位或Ga间隙有关。

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来源
《Nitride semiconductors》|1997年|881-886|共6页
会议地点 Boston MA(US)
作者
Z-Q. Fang; J. W. Hemsky; D. C. Look; M. P. Mack; R. J. Molnar; G. D. Via;
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Physics Department, Wright State University, Dayton, OH 45435 University Research Center, Wright State University, Dayton, OH 45435;

Physics Department, Wright State University, Dayton, OH 45435;

Physics Department, Wright State University, Dayton, OH 45435 University Research Center, Wright State University, Dayton, OH 45435;

Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106;

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173;

University Research Center, Wright State University, Dayton, OH 45435;

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3. Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs [J] . S. Petitdidier, Y. Guhel, G. Brocero, IEEE Transactions on Nuclear Science . 2017,第8期

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4. ELECTRON IRRADIATION INDUCED TRAP IN n-TYPE GaN [C] . Symposium on nitride semiconductors . 1998

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ELECTRON IRRADIATION INDUCED TRAP IN n-TYPE GaN

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