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首页> 外文会议>Nitride semiconductors >SELECTION, GROWTH, AND CHARACTERIZATION OF GATE INSULATORS ON MOCVD GALLIUM NITRIDE FOR THE USE IN HIGH POWER FIELD EFFECT DEVICES
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SELECTION, GROWTH, AND CHARACTERIZATION OF GATE INSULATORS ON MOCVD GALLIUM NITRIDE FOR THE USE IN HIGH POWER FIELD EFFECT DEVICES

机译：MOCVD氮化镓上栅极绝缘子的选择，生长和表征，用于大功率场效应器件

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摘要

Metal-insulator-semiconductor (MIS) capacitors have been fabricated on n-type GaN (0001) films using thermally grown Ga_2O_3, remote plasma enhanced chemical vapor deposited (RPECVD) SiO_2, and molecular beam epitaxy (MBE) AlN as the gate insulator and Al as the gate electrode. Each GaN epitaxial layer was grown by organometallic chemical vapor deposition (OMCVD) on a 6H-SiC(0001) substrate on which was previously deposited a 1000A buffer layer of AlN. Nitrogen-free polycrystalline films of Ga_2O_3 were grown on the GaN. Capacitance-voltage measurements of capacitors fabricated from this oxide showed distinct depletion and accumulation regions with significant leakage. The AlN and SiO_2 capacitors demonstrated better electrical characteristics than the Ga_2O_3 because of lower leakage. The RPECVD SiO_2/GaN heterostructures, in particular, showed good agreement with the curves calculated for an ideal oxide and a small amount of hysteresis.
机译：使用热生长的Ga_2O_3，远程等离子体增强化学气相沉积（RPECVD）SiO_2和分子束外延（MBE）AlN作为栅绝缘体，并在n型GaN（0001）膜上制造了金属绝缘体（MIS）电容器。 Al作为栅电极。通过在6H-SiC（0001）衬底上进行有机金属化学气相沉积（OMCVD）来生长每个GaN外延层，在该衬底上预先沉积了1000A的AlN缓冲层。在GaN上生长了Ga_2O_3的无氮多晶膜。由该氧化物制成的电容器的电容电压测量结果显示出明显的耗尽区和累积区，且漏电流明显。由于漏电流较低，AlN和SiO_2电容器的电特性优于Ga_2O_3。特别是，RPECVD SiO_2 / GaN异质结构与理想氧化物和少量磁滞的计算曲线具有良好的一致性。

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  • 来源
    《Nitride semiconductors》|1997年|1107-1112|共6页
  • 会议地点 Boston MA(US)
  • 作者

    R.J. Therrien; O.H. Nam; M.D. Bremser; K. Lithicum; H. Nimii; E.P. Carlson; G. Lucovsky; R.F. Davis;

  • 作者单位

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

    Department of Physics, North Carolina State University, Raleigh, NC 27695-8202;

    Department of Materials Science and Engineering, North Carolina State University, Raleigh,;

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  • 正文语种 eng
  • 中图分类 材料;
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