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首页> 外文会议>Nitride semiconductors >COMPARATIVE STUDY OF TYPICAL DEFECTS IN HI-NITRIDE THIN FILMS AND THEIR ALLOYS
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COMPARATIVE STUDY OF TYPICAL DEFECTS IN HI-NITRIDE THIN FILMS AND THEIR ALLOYS

机译：氮化物薄膜及其合金中典型缺陷的比较研究

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摘要

The microstructure and typical defects in GaN and GaN/GaAIN thin film heterostructures grown on (0001)α-Al_2O_3 were investigated using different transmission electron microscopy (TEM) techniques including diffraction contrast analysis, multiple dark field imaging, and high-resolution TEM. The films were grown by metal-organic chemical vapor deposition (MOCVD) technique. All of the films exhibited good electrical/optical properties. Yet, films were found to be of two distinctive types in terms of the microstructure. Films of the first type (A) were found to contain high, up to the 10~9 cm~2, density of inversion domains (IDs) as well as pure edge (b=1/3[1120]), screw and mixed type dislocations with the average density of 10~9 - 10~(10) cm~(-2). Smoother surface of the film, absence of IDs, and low (down to 10~7 cm~(-2) in the device quality layers) density of screw and mixed type dislocations were found to be characteristic for the second type (B) microstructure. The majority of defects present in these B-type GaN and GaN/GaAlN thin films were found to be threading pure edge dislocations associated with low angle tilt sub-grain boundaries. Despite the 10~(10) cm~(-2) density of the edge dislocations, the films displayed the device-quality electrical characteristics. Type A and type B microstructure can be obtained by the variation of growth conditions. The correlation between the optical and structural properties are discussed.
机译：使用不同的透射电子显微镜（TEM）技术，包括衍射对比分析，多重暗场成像和高分辨率TEM，研究了在（0001）α-Al_2O_3上生长的GaN和GaN / GaAIN薄膜异质结构的微观结构和典型缺陷。膜通过金属有机化学气相沉积（MOCVD）技术生长。所有的膜都表现出良好的电/光学性质。然而，就微观结构而言，发现膜具有两种独特的类型。发现第一类（A）薄膜包含高达10〜9 cm〜2的高密度反转域（ID）以及纯边缘（b = 1/3 [1120]），螺旋混合型型位错的平均密度为10〜9-10〜（10）cm〜（-2）。发现薄膜的表面光滑，没有ID和低（在器件质量层中低至10〜7 cm〜（-2））螺钉和混合型位错的密度是第二类（B）微结构的特征。发现在这些B型GaN和GaN / GaAlN薄膜中存在的大多数缺陷都是与低角度倾斜亚晶界相关的纯边缘错位。尽管边缘位错的密度为10〜（10）cm〜（-2），但薄膜仍显示出器件质量的电特性。通过改变生长条件可以获得A型和B型微观结构。讨论了光学和结构性质之间的相关性。

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  • 来源
    《Nitride semiconductors》|1997年|411-416|共6页
  • 会议地点 Boston MA(US)
  • 作者

    K. DOVIDENKO; S. OKTYABRSKY; J. NARAYAN; V. JOSHKIN; M. RAZEGHI;

  • 作者单位

    Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695;

    Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695;

    Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695;

    University of Wisconsin, Madison;

    ECE Department, Northwestern University, Evanston, IL 60208;

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  • 正文语种 eng
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