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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition
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Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

机译：金属化后氢气退火对原子层沉积生长的氧化锆C-V特性的影响

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摘要

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (V_(FB)) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400℃. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ～35 mV was observed on annealing the sample at 200℃ confirming the excellent suitability of this dielectric.
机译：大多数替代栅极电介质中存在的大量固定电荷会引起平带电压（V_（FB））的大幅度漂移，并且电荷的俘获和去俘获会导致电压循环出现滞后变化。两种现象都会影响晶体管的稳定可靠运行。在本文中，我们首次研究了后金属化氢退火对采用氧化锆（最有希望的栅极电介质之一）的MOS电容器C-V曲线的影响。在室温至400℃的不同温度下，样品在氢气环境中退火长达30分钟。在每个温度下退火后进行C-V测量，并从C-V曲线计算出磁滞宽度。在200℃下对样品进行退火时，观察到的最小磁滞宽度为〜35 mV，证实了该电介质的优异适应性。

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