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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Effectiveness of Plasma Nitrided Silicon Oxynitride as a Barrier Layer between High k Materials and Si Substrates
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Effectiveness of Plasma Nitrided Silicon Oxynitride as a Barrier Layer between High k Materials and Si Substrates

机译：等离子体氮化氮氧化硅作为高k材料与Si衬底之间的阻挡层的功效

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In this work, low temperature (300 - 450℃) plasma nitridation was conducted using N_2O and NH_3 atmosphere to produce an ultrathin SiO_xN_y layer. The bonding structure, distribution, and quantity of nitrogen and their effects on the growth kinetic of SiO_xN_y layers are studied by X-ray photoelectron spectroscopy (XPS). It is found that nitrogen atoms pile at the SiO_xN_y/Si interface at the very beginning of plasma N_2O and NH_3 nitridation. Due to the lack of additional Si source and low diffusivity of O or N atoms at low temperature, plasma nitridation will form a self-limited growth of SiO_xN_y, layer. Thermal stability of the interlayer between ultrathin Ta_2O_5 films on bare Si, plasma N_2O nitrided Si, and plasma NH_3 nitrided Si is also studied.
机译：在这项工作中，在N_2O和NH_3气氛下进行了低温（300-450℃）的等离子体氮化，以产生超薄的SiO_xN_y层。通过X射线光电子能谱（XPS）研究了氮的键合结构，分布，氮含量及其对SiO_xN_y层生长动力学的影响。发现氮原子在等离子体N_2O和NH_3氮化的最开始就堆积在SiO_xN_y / Si界面上。由于缺乏额外的硅源以及低温下O或N原子的低扩散性，等离子体氮化将形成SiO_xN_y层的自限生长。还研究了裸硅上的超薄Ta_2O_5膜，等离子体N_2O氮化硅和等离子体NH_3氮化硅之间的中间层的热稳定性。

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