• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Kinetics of agglomeration of NiSi and NiSi_2 phase formation
【24h】

Kinetics of agglomeration of NiSi and NiSi_2 phase formation

机译：NiSi和NiSi_2相形成的团聚动力学

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have studied the kinetics of NiSi agglomeration and NiSi_2 phase formation during heating of NiSi on Si, using simultaneous in situ measurements of resistance, light scattering and x-ray diffraction. NiSi is a desirable contact to Si because of its low resistivity, limited Si consumption and low formation temperature. However, the formation of the higher resistivity phase NiSi_2 must be avoided for device applications. Ni thin films 5 to 30 nm thick were deposited on substrates of poly-Si and silicon-on-insulator (SOI) and were studied using heating rates from 0.3 to 27 ℃/s. At low heating rates and for the thinnest films studied, NiSi agglomeration precedes NiSi_2 nucleation by as much as 350℃. The agglomeration temperature decreases with decreasing film thickness and linewidth. Once the film is agglomerated, the formation of NiSi_2 is delayed to higher temperature by its low nucleation site density and decreased contact area. We conclude that agglomeration is the primary failure mechanism limiting the morphological stability of NiSi as a contact material to Si devices.
机译：我们使用电阻，光散射和X射线衍射的同时原位测量方法研究了在Si上加热NiSi时NiSi团聚和NiSi_2相形成的动力学。 NiSi由于其低电阻率，有限的Si消耗和较低的形成温度而成为与Si的理想接触。但是，对于器件应用，必须避免形成较高电阻率的相NiSi_2。在多晶硅和绝缘体上硅（SOI）的衬底上沉积5至30 nm厚的Ni薄膜，并使用0.3至27℃/ s的加热速率进行研究。在低加热速率和研究的最薄薄膜下，NiSi团聚先于NiSi_2成核，最高可达350℃。附聚温度随着膜厚度和线宽的减小而降低。一旦膜团聚，由于其低的成核位点密度和减小的接触面积，NiSi_2的形成被延迟到更高的温度。我们得出的结论是，团聚是主要的失效机理，限制了作为器件接触材料的NiSi的形貌稳定性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号