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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Dynamic growth mechanism and interface structure of crystalline zirconia on silicon
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Dynamic growth mechanism and interface structure of crystalline zirconia on silicon

机译：硅上晶体氧化锆的动态生长机理和界面结构

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In present report, we have studied the initial stage of the growth of crystalline yttria-stabilized zirconia (YSZ) films on the natively oxidized Si (100) wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that, for the first few monolayers of crystalline YSZ deposited on Si (100), the dynamic processes appear to be the decomposition of SiO_2 to SiO, the formation of ZrO_2, and the desorption of SiO. The native amorphous silicon oxide layer is removed completely with the continued deposition of YSZ and the oxygen in this layer is used as oxygen source for forming stable crystalline oxide film. XPS depth profile and HRTEM investigation showed that the interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous layer. The interface structure is suggested to have a sequence of -Si-O-Zr-O-. For the film with electrical equivalent oxide thickness 1.46 nm, the leakage current is about 1.1 x l0~(-3) A/cm~2 at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0 x 10~(11)eV~(-1)cm~(-2).
机译：在本报告中，我们已经研究了通过脉冲激光沉积在天然氧化的Si（100）晶片上生长氧化钇稳定的氧化锆（YSZ）膜的初始阶段。 X射线光电子能谱（XPS）和高分辨率透射电子显微镜（HRTEM）显示，对于沉积在Si（100）上的晶体YSZ的前几个单层，动力学过程似乎是SiO_2分解为SiO， ZrO_2的形成和SiO的解吸。随着YSZ的连续沉积，天然非晶氧化硅层被完全去除，并且该层中的氧气被用作氧气源以形成稳定的结晶氧化物膜。 XPS深度分布图和HRTEM研究表明，与硅接触的结晶YSZ膜的界面原子上很锐利，并且相应地结晶，没有非晶层。建议该界面结构具有-Si-O-Zr-O-序列。对于具有等效氧化物厚度1.46 nm的薄膜，在1 V偏置电压下的泄漏电流约为1.1 x l0〜（-3）A / cm〜2。测得该薄膜的磁滞和界面态密度小于10 mV，且小于2.0 x 10〜（11）eV〜（-1）cm〜（-2）。

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