Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

机译：在重掺杂B的外延SiGe上形成Ni-单锗硅化镍，用于超浅的源极/漏极接触

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The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si_(1-x)Ge_x films with x=0.18, 0.32 and 0.37 is studied. No NiSi_2 is found in these samples even after annealing at 850 ℃, which can be compared to the formation of NiSi_2 at 750 ℃ on Si(100). Resistance and diffraction studies for the Si_(0.82)Ge_(0.18) sample indicate that NiSi_(0.82)Ge_(0.18) forms and the NiSi_(0.82)Ge_(0.18)/Si_(0.82)Ge_(0.18) structure is stable from 400 to 700 ℃. For the NiSi_(1-u)Ge_u formed in all Si_(1-x)Ge_x samples, where u can be different from x, a strong film texturing is observed. When the Ge fraction is increased from 18 at.% to 32-37 at.%, the morphological stability of the film is degraded and a substantial increase in sheet resistance occurs already at 600 ℃. The contact resistivity for the NiSi_(0.8)Ge_(0.2)/Si_(0.8)Ge_(0.2) interface formed at 550 ℃ is determined as 1.2xl0~(-7) Ωcm~2, which satisfies the ITRS contact resistivity requirement for the 70 nm technology node.

机译：研究了Ni与重掺杂B的应变外延Si_（1-x）Ge_x薄膜之间的固相相互作用过程中Ni锗硅化物的形成，x = 0.18、0.32和0.37。即使在850℃退火后，在这些样品中也没有发现NiSi_2，这可以与在Si（100）上750℃下形成NiSi_2进行比较。 Si_（0.82）Ge_（0.18）样品的电阻和衍射研究表明，NiSi_（0.82）Ge_（0.18）形成且NiSi_（0.82）Ge_（0.18）/ Si_（0.82）Ge_（0.18）结构在400℃下稳定到700℃。对于在所有Si_（1-x）Ge_x样品中形成的NiSi_（1-u）Ge_u，其中u可以不同于x，观察到了很强的薄膜纹理。当Ge含量从18at。％增加到32-37at。％时，薄膜的形貌稳定性下降，并且在600℃时薄层电阻已经显着增加。确定在550℃下形成的NiSi_（0.8）Ge_（0.2）/ Si_（0.8）Ge_（0.2）界面的接触电阻率为1.2xl0〜（-7）Ωcm〜2，满足ITRS要求。 70 nm技术节点。

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《Novel Materials and Processes for Advanced CMOS》|2002年|p.117-122|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Christian Isheden; Johan Seger; Henry H. Radamson; Shi-Li Zhang; Mikael Oestling;
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KTH, Royal Institute of Technology, Department of Microelectronics Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Selective Epitaxial Growth Of B-doped Sige And Hcl Etch Of Si For The Formation Of Sige:b Recessed Source And Drain (pmos Transistors) [J] . H.H. Radamson, M. Kolahdouz, R. Ghandi, Thin Solid Films . 2008,第1期

机译：B掺杂Sige的选择性外延生长和Si的Hcl蚀刻以形成Sige：b凹陷的源极和漏极（pmos晶体管）
2. P-Channel Tri-Gate FinFETs Featuring Ni1 − yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance [J] . Lee R. T.-P., Tan K.-M., Lim A. E.-J., IEEE Electron Device Letters . 2008,第5期

机译：具有Ni1-yPty SiGe源极/漏极触点的P沟道三栅极FinFET，可增强驱动电流性能
3. Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_(1-x)Ge_x substrates for Schottky source/drain transistors [J] . Xiang Wenfeng, Liu Kun, Zhao Kun, Journal of Semiconductors . 2013,第12期

机译：在肖特基源极/漏极晶体管的重硼掺杂Si_（1-x）Ge_x衬底上形成Ni（Pt）锗硅化物触点
4. Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts [C] . Christian Isheden, Johan Seger, Henry H. Radamson, Materials Research Society Symposium . 2003

机译：用于浅源/漏极触点的重物B掺杂外延SiGe的Ni Mono-锗硅烷形成
5. Formation of low-resistivity germanosilicide contacts to phosphorus doped silicon-germanium alloy source/drain junctions for nanoscale CMOS. [D] . Mo, Hongxiang. 2004

机译：低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
6. Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET [O] . Zhaonian Yang, Yuan Yang, Ningmei Yu, 2018

机译：使用隧道FET中的SiGe源/漏区提高ESD保护的鲁棒性
7. High Performance pMOSFETs with High Ge Fraction Strained SiGe-heterostructure-channel and Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD [O] . Shinobu Takehiro, Masao Sakuraba, Junichi Murota, 2006

机译：具有高GE分数的高性能PMOSFET应变SiGE-异质结构 - 通过选择性B掺杂SiGE CVD形成的超肺源/漏极

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

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