Low Thermal Budget NiSi Films on SiGe Alloys

机译：SiGe合金上的低热预算NiSi膜

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Nickel silicides were formed on Si (100) substrates and CVD grown Si_(0.9)Ge_(0.1)/Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction, Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy. RBS simulations and XPS study revealed the formation of a ternary nickel germanosilicide phase for the SiGe alloy. The incorporation of Ge resulted in a higher temperature window for the stability of low-resistive monosilicide phase. Electrical properties of the grown silicides were characterized by four-probe resistivity and contact resistance measurements.

机译：通过对蒸发的Ni膜进行低热预算退火，在硅（100）衬底和CVD生长的Si_（0.9）Ge_（0.1）/ Si层上形成硅化镍，以评估其在超浅结中的效用。通过X射线衍射，卢瑟福背散射（RBS），X射线光电子能谱（XPS）和原子力显微镜研究了使用常规炉和快速热退火形成的硅化物的相形成和微观结构。 RBS模拟和XPS研究表明，SiGe合金形成了三元锗硅化镍。 Ge的掺入导致较低电阻的单硅化物相的稳定性的较高温度窗口。通过四探针电阻率和接触电阻测量来表征生长的硅化物的电性能。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.247-252|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
S. K. Ray; T. N. Adam; G. S. Kar; C. P. Swann; J. Kolodzey;
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作者单位

Department of Physics, IIT Kharagpur 721 302, India;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Thermal stability study of NiSi and NiSi_2 thin films [J] . F.F. Zhao, J.Z. Zheng, Z.X. Shen, Microelectronic Engineering . 2004,第1期

机译：NiSi和NiSi_2薄膜的热稳定性研究
3. NiSi-Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance [J] . Eadi Sunil Babu, Song Ki-Woo, Song Hyeong-Sub, Microelectronic Engineering . 2021,第Feba期

机译：NISI-TB合金中间层间性能在NISI / SI接口，用于提高热稳定性和接触电阻
4. Low Thermal Budget NiSi Films on SiGe Alloys [C] . S.K.Ray, T.N.Adam, G.S.Kar, Materials Research Society Symposium . 2003

机译：低温预算NISI薄膜在SIGE合金上
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7. Thermal deterioration of Pb-In alloy films under thermal stress cycles from 343K to 78K. (Hillock formation of Pb-In alloy films for Josephson-Junction device) [O] . Hideharu OHARA, Yoshimi KURODA, Toshimitsu YOKOBORI 1986

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8. Investigation of the kinetics of surface-limited thin film growth of SiGe alloys [R] . Sharp, J W, Eres, G 1992

机译：siGe合金表面限制薄膜生长动力学研究

Low Thermal Budget NiSi Films on SiGe Alloys

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