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Optimization of stepper parameters and its design rule for an attenuatedphase-shifting mask,

机译：衰减相移掩模的步进器参数优化及其设计规则，

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Abstract: An attenuated phase-shifting mask is favorable lithography technique for enhancing the depth-of-focus for isolated hole. However, it is restricted by sidelobe printing at dense array holes. To reduce the sidelobe printing, various methods such as surface insoluble layer, add an auxiliary hole, and optimization of NA and sigma were investigated. The method of surface insoluble layer was not effective for the dense array holes and CD uniformity was not improved. The method that adds an auxiliary hole at sidelobe position of highly dense array pattern can reduce the sidelobe printing completely, but mask CD and mask defect inspection as well as automatic layout of auxiliary holes for nonrepeating patterns in periphery area will be issued. In order to optimize the NA and sigma value, DOF and sidelobe printing were considered. Also CD control is studied by considering the CD linearity and optical proximity correction (OPC) as mask print bias is applied. Design rule for attPSM was suggested at optimized and fixed conditions. !4
机译：摘要：衰减相移掩模是一种有利的光刻技术，可以提高隔离孔的聚焦深度。但是，它受到密集阵列孔处的旁瓣打印的限制。为了减少旁瓣打印，研究了各种方法，例如表面不溶层，添加辅助孔以及优化NA和sigma。表面不溶层的方法对于密集的阵列孔无效，并且CD均匀性没有改善。在高密度阵列图案的旁瓣位置增加一个辅助孔的方法可以完全减少旁瓣的印刷，但是将发布掩膜CD和掩膜缺陷检查以及外围区域中非重复图案的辅助孔的自动布局。为了优化NA和sigma值，考虑了DOF和旁瓣印刷。另外，通过考虑CD线性度和光学邻近校正（OPC）来研究CD控制，因为应用了掩模印刷偏压。建议在优化和固定条件下设计attPSM。 ！4

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