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Optimization of exposure procedures for sub-quarter-micron CMOS a

机译：亚微米CMOS的曝光程序优化

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Abstract: We investigated various exposure procedures to minimize the Critical Dimension (CD) variation for the patterning of sub- quarter micron gates. To examine dependence of the CD variation on the pattern pitch and defocus conditions, the light intensity profiles of four different mask structures: (1) a binary mask with clear field, (2) a binary mask with dark field, (3) a phase-edge type phase-shifting mask (a phase-edge PSM) with clear field, and (4) a halftone phase- shifting mask (a halftone PSM) were compared, where exposure wavelength was 248 nm and numerical aperture (NA) of KrF stepper was 0.55. For 200-nm gate patterns, dependence of the CD variation on the pattern pitch and defocus conditions was minimized by a phase-edge PSM with clear field. By optimizing the illumination condition for a phase-edge PSM exposure, we obtained the CD variation of 10 nm at the minimum gate pitch of 0.8 micrometer and the defocus condition of plus or minus 0.4 micrometer. Applying the optimized exposure procedure to the device fabrication process, we obtained the total CD variation of plus or minus 27 nm. !7
机译：摘要：我们研究了各种曝光程序，以最小化亚四分之一微米浇口图案的临界尺寸（CD）变化。为了检查CD变化对图案间距和散焦条件的依赖性，使用四种不同掩模结构的光强度曲线：（1）具有明场的二元掩模，（2）具有暗场的二元掩模，（3）相边缘型移相掩模（相边缘PSM）具有清晰的视野，和（4）半色调相移掩模（半色调PSM）进行了比较，其中曝光波长为248 nm，数值孔径（NA）为KrF步进为0.55。对于200 nm的栅极图案，具有清晰视野的相位边缘PSM使CD变化对图案间距和散焦条件的依赖性最小。通过优化相位边缘PSM曝光的照明条件，我们在0.8微米的最小栅极间距和正负0.4微米的散焦条件下获得了10 nm的CD变化。将优化的曝光程序应用于器件制造过程，我们获得了正负27 nm的总CD变化。 ！7

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