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Alignment performance versus mark quality

机译：对准性能与标记质量

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Abstract: A procedure is described for preparing relief alignment marks with precisely degraded quality that are then used to calibrate alignment performance. Alignment degrades with mark quality, eventually failing when the marks are no longer found. Using conventional processes it is difficult to accurately find this threshold and virtually impossible to experimentally establish the functional relationship between alignment mark quality and alignment precision. Marks that simulate a full range of process conditions, including planarization and granularity, are formed utilizing the continuous tone relief response of I-line photoresist to $lambda equals 248 nm dose, thereby avoiding the complication of fabricating wafers through selective steps of the actual semiconductor manufacturing process. The usual box in box overlay measurement problem, caused by boxes formed by different processes, is avoided by printing high contrast overlay evaluation structures regardless of the alignment mark quality. Overlay is measured and plotted as a function of mark quality and the lithography engineer knows precisely the condition of the alignment system. For example; it is easily established by direct measurement the alignment system's ability to control magnification as the relief of the alignment marks change. !1
机译：摘要：描述了一种程序，该程序用于制备质量精确降低的凸版对准标记，然后将其用于校准对准性能。对齐会随着标记质量而降低，最终会在找不到标记时失败。使用常规方法很难精确地找到该阈值，并且实际上不可能通过实验建立对准标记质量和对准精度之间的功能关系。利用I线光刻胶对λ等于248 nm剂量的连续色调浮雕响应，形成了模拟整个工艺条件（包括平面化和粒度）的标记，从而避免了通过实际半导体的选择性步骤来制造晶圆的复杂性制造过程。无论对齐标记的质量如何，都可以通过打印高对比度的覆盖评估结构来避免由不同过程形成的盒子所引起的常见的盒中盒重叠测量问题。根据标记质量测量并绘制覆盖图，光刻工程师精确地知道对准系统的状况。例如;通过直接测量可以轻松地确定对准系统的控制放大倍率的能力，因为对准标记的凸版会发生变化。 ！1

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