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首页> 外文会议>Optical Microlithography XIX pt.1 >Experimental evaluation of Bulls-Eye illumination for assist-free, random contact printing at sub-65nm node
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Experimental evaluation of Bulls-Eye illumination for assist-free, random contact printing at sub-65nm node

机译：Bulls-Eye照明在65nm以下节点的无辅助随机接触印刷的实验评估

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摘要

Patterning of random CH for the 65nm node and below has proven to be a very difficult task. As a rule of thumb, difficulties in contact patterning are driven by the low depth of focus towards isolated contacts and/or the lower contrast combined with higher mask error factor (MEEF) for denser contact arrays. In this work, we experimentally investigate the use of illumination modes consisting of the combination of annular plus conventional illumination, so-called "Bulls-Eye" illumination. This study is a search for the optimal sigma settings for the annular and conventional parts, with respect to process window and MEEF through pitch. Also, the extend to which the Bulls-Eye is advantageous is demonstrated by means of experimental comparison to wafer prints by conventional illumination. Besides regular grid CH arrays, the Bulls-Eye performance is evaluated for different 2D contact patterns. Experimental results are obtained on ASML ArF scanners at various NAs up to 0.93. Additionally, immersion lithography and Focus Drilling are considered at given exposure setting as techniques to increase the focal depth. The experiments show promising results, printing contacts from k_1 = 0.40 onwards with acceptable process, MEEF, and proximity through pitch, and this without side-lobe printing.
机译：对于65nm及以下节点，随机CH的图案已被证明是一项非常困难的任务。根据经验，接触图案的困难是由朝向隔离接触点的低聚焦深度和/或较低的对比度与较高的掩膜误差因子（MEEF）结合而成的。在这项工作中，我们在实验上研究了照明模式的使用，该照明模式包括环形照明和常规照明的组合，即所谓的“牛眼”照明。这项研究是针对环形零件和常规零件的最佳sigma设置，相对于工艺窗口和通过间距的MEEF。而且，通过与常规照明下的晶片印刷进行实验比较，证明了Bulls-Eye的优势。除了常规的网格CH阵列以外，还针对不同的2D接触模式评估了Bulls-Eye性能。在ASML ArF扫描仪上以0.93的各种NA获得实验结果。另外，在给定的曝光设置下，沉浸式光刻和聚焦钻孔被视为增加焦深的技术。实验显示出令人鼓舞的结果，从k_1 = 0.40起，以可接受的过程，MEEF和通过间距的接近度打印触点，并且没有旁瓣打印。

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