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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Investigation of a-Si:H solar cells with a protocrystalline-like amorphous silicon intrinsic layer
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Investigation of a-Si:H solar cells with a protocrystalline-like amorphous silicon intrinsic layer

机译：具有原晶体状非晶硅本征层的a-Si：H太阳能电池的研究

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We investigate the effects of the hydrogen dilution in a-Si:H film on the crystallization and the absorption property. Crystallization of the a-Si:H films from amorphous to several tens nanometer-sized crystal state is observed by increase of hydrogen dilution ratio using PECVD. The phase transition of the a-Si:H films from amorphous to micro-crystal occurred very rapidly in a very narrow range of the silane concentration(SC). Protocrystalline-like properties of silicon (pc-Si:H) is obtained fractionally within the a-Si:H matrix. It could be assumed that the volume fraction of the protocrystalline silicon is the highest in the range of SC=3.7~4.0%, whereas amorphous or micro-crystalline phases are dominant in the other range of SC<;4.0% and SC>;3.0%, respectively. The μc-Si:H films with SC=1.0%~1.4% have the micro-crystalline volume fraction 75%~80%. But the μc-Si:H films still contain the amorphous, proto- or nano-crystalline silicon in the rest volume so that they show some different characteristics with other micro-crystalline silicon. The a-Si:H films with SC=3.7~4.0% doesn''t contain the micro-crystalline volume fraction but different characteristics in absorption from the other a-Si:H films with higher SC>;4.0%. Such films could be assumed to have the properties of the protocrystalline silicon. They, consequently, showed the low degradation property from the light soaking and the rapid stability.
机译：我们研究了氢在a-Si：H膜中稀释对结晶和吸收性能的影响。通过使用PECVD增加氢稀释率，观察到了非晶硅到几十纳米大小的晶态的a-Si：H膜的结晶。 a-Si：H薄膜从非晶态到微晶的相变发生在硅烷浓度（SC）的非常狭窄的范围内。硅（pc-Si：H）的原晶体状特性在a-Si：H基体中部分获得。可以假设，在SC = 3.7〜4.0％的范围内，原晶硅的体积分数最高，而在SC <; 4.0％和SC>; 3.0的其他范围内，非晶或微晶相占主导％， 分别。 SC = 1.0％〜1.4％的μc-Si：H薄膜的微晶体积分数为75％〜80％。但是，μc-Si：H膜的其余部分仍包含非晶，原始或纳米晶硅，因此它们与其他微晶硅表现出一些不同的特性。 SC = 3.7〜4.0％的a-Si：H薄膜不包含微晶体积分数，但与其他SC>; 4.0％的a-Si：H薄膜的吸收特性不同。可以假定这样的膜具有原晶硅的特性。因此，它们由于光浸泡而显示出低降解性能和快速稳定性。

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