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Fabrication of Cu(In,Ga)Se_2 Thin Film by Selenization of Stacked Elemental Layer with Solid Selenium

机译：固体硒堆积元素层的硒化制备Cu（In，Ga）Se_2薄膜

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Cu(In,Ga)Se_2 thin films were prepared using the classical two-step process approach. In the first step, the metallic precursors were deposited on the soda-lime glass substrates by electron-beam evaporation following the Cu/In/Ga... sequence. The selenization, called the second step, was produced in a rapid thermal processor. This process performed under nitrogen atmosphere of 200 Torr at 200℃ for 5 minutes followed by 500℃ for 3 minutes. The device quality of CIGS film, with the atomic ratios of Cu/(In+Ga) of 0.90 and Ga/(In+Ga) of 0.26, was obtained when the Cu/In/Ga metallic layer had thinness ratio of 900 A/600 A /200 A. The CIGS film with homogeneous and dense surface morphology with large grain size (～ 2 μm) was formed.

机译：采用经典的两步法制备Cu（In，Ga）Se_2薄膜。在第一步中，按照Cu / In / Ga ...顺序通过电子束蒸发将金属前体沉积在钠钙玻璃基板上。硒化被称为第二步，是在快速热处理器中产生的。该过程在200Torr的氮气氛下在200℃下进行5分钟，然后在500℃下进行3分钟。当Cu / In / Ga金属层的薄度比为900 A /时，获得的CIGS膜的器件质量为：Cu /（In + Ga）的原子比为0.90，Ga /（In + Ga）的原子比为0.26。 600 A / 200A。形成具有均匀且致密的表面形貌且晶粒尺寸大（〜2μm）的CIGS膜。

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来源
《Photovoltaics for the 21st century 7》|2011年|p.241-246|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Zhao-Hui Li; Eou-Sik Cho; Sang Jik Kwon; Mario Dagenais;
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作者单位

Department of Electronics Engineering, Kyungwon University, Seongnam, Korea;

Department of Electronics Engineering, Kyungwon University, Seongnam, Korea;

Department of Electronics Engineering, Kyungwon University, Seongnam, Korea;

Department of Electrical and Computer Engineering, University of Maryland, College Park, MD20742, USA;

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正文语种 eng
中图分类化学电源、电池、燃料电池;
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1. Cu(In,Ga)Se_2 thin films without Ga segregation prepared by the single-step selenization of sputter deposited Cu-In-Ga-Se precursor layers [J] . Dong Gwon Moon, Jae Ho Yun, Jihye Gwak, Energy & environmental science . 2012,第12期

机译：通过单步硒化溅射沉积的Cu-In-Ga-Se前驱体层制备的无Ga偏析的Cu（In，Ga）Se_2薄膜
2. Influence of the stacking order on structural features of the Cu-In-Ga-Se precursors for formation of Cu(In,Ga)Se_2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor and diethylselenide gas [J] . F.B. Dejene, M. Sugiyama, H. Nakanishi, Physica Status Solidi. C, Conferences and critical reviews . 2006,第8期

机译：堆积顺序对通过InSe / Cu / GaSe合金与元素Se蒸气和二乙基硒化物气体热反应制备的Cu-In-Ga-Se前驱体的结构特征的影响，以形成Cu（In，Ga）Se_2薄膜
3. Cu(In, Ga)Se_2 thin films prepared from stacked precursors by post-selenization process [J] . Jian Wang, Jie Zhu, Long-Long Liao Journal of materials science . 2014,第4期

机译：后硒化工艺从堆叠前驱体制备Cu（In，Ga）Se_2薄膜
4. MoSe_2 Formation During Fabrication of Cu(In,Ga)Se_2 Solar Cell Absorbers by Using Stacked Elemental Layer Precursor and Selenization at High Temperatures [C] . Sebastian S. Schmidt, Christian Wolf, Niklas Papathanasiou, IEEE Photovoltaic Specialists Conference . 2013

机译：通过在高温下使用堆叠的元素层前体和硒化在Cu（In，Ga）Se_2 Se_2太阳能电池吸收剂期间形成MOSE_2
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Fabrication of Cu(In,Ga)Se_2 Thin Film by Selenization of Stacked Elemental Layer with Solid Selenium

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