首页> 外文会议>Physics and simulation of optoelectronic devices XXIII >Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

【24h】

Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

机译：半导体工艺偏移引起的不必要的微透镜对CMOS光电二极管光学性能的影响的研究

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this work the influence of nanoscale particles caused by processing excursions during back end of line (BEOL) processing on top of the photodiode active region was examined. To investigate the influence of the particles on the photodiode performance, wafer level optical responsivity measurements were done. In addition to the measurements the effect of the particles was simulated with a simplified model based on a modified transfer matrix method (MTMM). The simulation and measurements are in very good agreement with each other and lead to the conclusion that even though some decrease of sensitivity was observed, the overall system variability was reduced by the presence of particles. Furthermore, the influence of the dielectric stack layer thickness variability on the photon flux density is reduced.

机译：在这项工作中，研究了由线后端（BEOL）处理在光电二极管有源区顶部上的处理偏移引起的纳米级颗粒的影响。为了研究颗粒对光电二极管性能的影响，进行了晶圆级光响应度测量。除了测量之外，还使用基于改进的传递矩阵方法（MTMM）的简化模型来模拟粒子的效果。仿真和测量结果彼此非常吻合，得出的结论是，即使观察到灵敏度有所降低，但由于颗粒的存在，降低了整个系统的可变性。此外，减小了电介质堆叠层厚度可变性对光子通量密度的影响。

著录项

来源
《Physics and simulation of optoelectronic devices XXIII》|2015年|93571O.1-93571O.10|共10页
会议地点 San Francisco CA(US)
作者
Andrea Kraxner; Jong Mun Park; Rainer Minixhofer;
展开▼
作者单位

Ams AG, Tobelbaderstrasse 30, 8141 Schloss Premstaetten, Austria,Institute of Solid State Physics, Graz University of Technology, A-8010 Graz, Austria;

Ams AG, Tobelbaderstrasse 30, 8141 Schloss Premstaetten, Austria;

Ams AG, Tobelbaderstrasse 30, 8141 Schloss Premstaetten, Austria;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
CMOS photodiodes; microlenses; modified transfer matrix method; surface roughness; BEOL; spectral sensitivity;

机译：CMOS光电二极管微透镜改进的转移矩阵法；表面粗糙度; BEOL;光谱灵敏度;

相似文献

外文文献
中文文献
专利

1. Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes [J] . Goiffon V., Cervantes P., Virmontois C., Nuclear Science, IEEE Transactions on . 2011,第6期

机译：用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局
2. Patent Issued for Micro-Lenses for CMOS Imagers and Method for Manufacturing Micro-Lenses [J] . Journal of Engineering . 2013,第12期

机译：用于CMOS成像器的微透镜的专利发布和用于制造微透镜的方法
3. The Investigation of 2D Channel Material Device in Semiconductor Process and Equipment Development by CMOS Manufacturing Technology [J] . Min-Cheng Chen 科儀新知 . 2016,第209期

机译：CMOS制造技术在半导体工艺与设备开发中的二维通道材料器件研究
4. Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes [C] . Andrea Kraxner, Jong Mun Park, Rainer Minixhofer Conference on physics and simulation of optoelectronic devices XXIII . 2015

机译：关于CMOS光电二极管光学行为引起的半导体处理偏移引起的不需要微透镜的影响
5. Equalization Techniques for CMOS Optical Receivers with Integrated Silicon Photodiode [D] . Kim, Bong Chan. 2017

机译：集成硅光电二极管的CMOS光接收器的均衡技术
6. Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations [O] . Chang-Fu Han, Jiun-Ming Chiou, Jen-Fin Lin 2020

机译：深沟槽隔离和倒金字塔结构用于通过仿真提高CMOS图像传感器中光电二极管的光学效率
7. Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [O] . Goiffon Vincent, Cervantes Paola, Virmontois Cédric, 2011

机译：适用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局
8. CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe. [R] . An, S. K., Oh, S. J., Kim, S. J. 2001

机译：为半导体神经探针开发的微加工工艺的CmOs兼容性。

Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

摘要

著录项

相似文献

相关主题

期刊订阅