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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Modification of MBE for growth of Dilute Nitride Quantum Well Photovoltaics
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Modification of MBE for growth of Dilute Nitride Quantum Well Photovoltaics

机译：MBE的修改，用于生长稀氮化物量子阱光伏电池

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Ⅲ-Ⅴ Dilute Nitride multi-quantum well structures are currently promising candidates to achieve 1 sun efficiencies of ＞40% with multi-junction design (InGaP/ GaAs/ GaAsN/ Ge). In other works, we have discussed the design having Ⅲ-Ⅴ Dilute Nitride GaAsN multi-quantum well (MQW) structures with resonant tunneling setup in the intrinsic region, in order to improve the response potentially yielding 1 sun efficiencies greater than 40%. Earlier efforts in this direction had yielded samples with considerable incorporation of N at the QW/barrier interface, leading to the formation of nitridation and reducing the overall quantum efficiency. In this work we discuss the results of the growth of MQW solar cells in MBE, with a modified run-vent system for the RF N-plasma setup aimed at increasing the sharpness of the well-barrier transition, and the change in quality of the quantum wells grown.
机译：Ⅲ-Ⅴ型稀氮化物多量子阱结构目前有望通过多结设计（InGaP / GaAs / GaAsN / Ge）实现1＞ 40％的太阳效率。在其他工作中，我们讨论了在本征区域中具有共振隧穿设置的Ⅲ-Ⅴ型稀氮化镓GaAsN多量子阱（MQW）结构的设计，目的是改善响应，从而可能产生大于40％的1个太阳效率。在此方向上的早期努力已产生了在QW /势垒界面处大量掺入N的样品，从而导致氮化的形成并降低了整体量子效率。在这项工作中，我们讨论了MBE中MQW太阳能电池增长的结果，以及用于射频N-等离子装置的改良型运行通风系统，旨在提高阱-势垒转变的清晰度，并提高质量。量子阱生长。

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