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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Improvement in Etching Rate for Epilayer Lift-Off with Surfactant
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Improvement in Etching Rate for Epilayer Lift-Off with Surfactant

机译：用表面活性剂提高表皮层剥离的蚀刻速率

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摘要

In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm/min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.
机译：在这项研究中，通过混合蚀刻剂溶液的外延剥离（ELO）工艺将GaAs外延层与GaAs衬底快速分离。 HF溶液与作为混合蚀刻剂溶液的表面活性剂混合以蚀刻AlAs牺牲层，以选择性地湿法蚀刻AlAs牺牲层。添加剂表面活性剂蚀刻剂显着提高了氢氟酸蚀刻溶液中的蚀刻速率。这是因为表面活性剂提供亲水性以改变接触角，并增强了GaAs外延层和GaAs衬底之间的混合蚀刻剂的流体性质。由于半导体蚀刻中的关键反应产物是溶解的砷化氢气体，因此从蚀刻剂溶液中释放出了砷化氢气体。在底切AlAs层之前，气会形成气泡，很容易置换腐蚀液。结果表明，丙酮和氢氟酸之比约为1：1，最快的蚀刻速率为13.2μm/ min。与纯氢氟酸相比，刻蚀速率提高了约4倍，而且可以缩短约70％的GaAs外延层与GaAs衬底的分离时间。结果表明，混合蚀刻剂溶液改善了蚀刻率和稳定性。这不仅节省了外延层和蚀刻溶液的暴露时间，而且减少了对外延层结构的损害。

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