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首页> 外文会议>Physics and technology of high-k materials 9 >Near Room-Temperature Liquid-Phase Deposition of Barium-doped TiO_2 on n-GaN and Its Application to AlGaN/GaN MOSHEMTs
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Near Room-Temperature Liquid-Phase Deposition of Barium-doped TiO_2 on n-GaN and Its Application to AlGaN/GaN MOSHEMTs

机译：n-GaN上钡掺杂TiO_2的近室温液相沉积及其在AlGaN / GaN MOSHEMT中的应用

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摘要

Barium-doped TiO_2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metaloxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 ×10~(-9) A/cm~2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I_(ON)/I_(OFF) ratio (4.5×10~5) are obtained.
机译：研究了通过简单的液相沉积方法在低温下沉积在GaN层上的钡掺杂TiO_2薄膜。还说明了在AlGaN / GaN金属氧化物半导体高电子迁移率晶体管（MOSHEMT）中用作栅极电介质的情况。 n掺杂GaN上的金属氧化物半导体（MOS）结构的电学特性表明，在1 MV / cm时，漏电流密度约为5.09×10〜（-9）A / cm〜2，击穿场大于13 MV / cm。 AlGaN / GaN MOSHEMT的最大漏极电流密度高于HEMT，其栅极电压摆幅更宽，亚阈值摆幅更低（112mV / dec）和I_（ON）/ I_（OFF）更高。获得比率（4.5×10〜5）。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Chih-Chun Hu; Mon-Sen Lin; Tsu-Yi Wu; Feri Adriyanto; Po-Wen Sze; Chang-Luen Wu; Yeong-Her Wang;

  • 作者单位

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Department of Electrical Engineering, Kao-Yuan University, Lu-Chu, Kaoshiung, Taiwan;

    Transcom Inc., Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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