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Electrical Characteristics and Temperature Response of Al_2O_3 Gate Dielectrics with and without Nitric Acid Compensation

机译:有和没有硝酸补偿的Al_2O_3栅介质的电特性和温度响应

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摘要

In this paper, the Al_2O_3 gate dielectrics prepared by the in situ oxidation of sputtered Al in Ar/O_2 ambient at room temperature and then without and with HNO_3 compensation are demonstrated. It was found that the saturation substrate injection currents of MOS capacitors with P-type Si substrate at the positive bias region exhibit perimeter-dependent characteristics due to the enhanced fringing field effect. The temperature responses of perimeterdependent saturated currents are different between two samples. The sample with HNO_3 compensation shows regular dependence of substrate current on n_i, but the one without HNO_3 compensation exhibits additional current components come from oxide nonuniformity and interface trap density. The gate leakage current density at the negative bias region and the time-dependent dielectric breakdown reliability at 25 ℃ and 125 ℃ of Al_2O_3 capacitors can be improved by utilizing HNO_3 compensation. It is believed that the HNO_3 compensation is beneficial to the improvement of the SiO_2/Si interface and the quality of the Al_2O_3/SiO_2 oxide stacks.
机译:本文介绍了通过在室温下在Ar / O_2环境中原位氧化溅射Al制备的Al_2O_3栅极电介质,然后在不使用HNO_3的情况下进行补偿。已经发现,由于边缘电场效应的增强,具有P型硅衬底的MOS电容器在正偏置区的饱和衬底注入电流呈现出与周长有关的特性。在两个样本之间,与周长相关的饱和电流的温度响应不同。具有HNO_3补偿的样品显示出衬底电流对n_i的规律性依赖性,但是没有HNO_3补偿的样品显示出来自氧化物不均匀性和界面陷阱密度的额外电流分量。利用HNO_3补偿可以提高Al_2O_3电容器在负偏压区的栅漏电流密度和25℃和125℃下随时间变化的介电击穿可靠性。可以认为,HNO_3补偿有利于改善SiO_2 / Si界面和Al_2O_3 / SiO_2氧化物叠层的质量。

著录项

  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Chien-Chih Lin; Jenn-Gwo Hwu;

  • 作者单位

    Graduate Institute of Electronics Engineering / Department of Electrical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617 Taiwan;

    Graduate Institute of Electronics Engineering / Department of Electrical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617 Taiwan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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