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首页> 外文会议>Physics and technology of high-k materials 9 >Molecular Beam Epitaxial Growth of 6.1 Semiconductors Heterostructures for Advanced p-type Quantum Well Devices
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Molecular Beam Epitaxial Growth of 6.1 Semiconductors Heterostructures for Advanced p-type Quantum Well Devices

机译：先进p型量子阱器件的6.1半导体异质结构的分子束外延生长

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摘要

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If Ⅲ-Ⅴ materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for ptype channel for quantum well devices. In this work we first investigated building blocks such as passivation and contact resistances on both GaSb and InAs epilayer in order to define the optimal heterostructure for the quantum well device. In a second part, we focused on the growth studies of the complex heterostructure made with "6.1" semiconductors as well as the importance of the interface engineering with TEM. Finally, the properties of the optimized quantum well stack have been studied by means of photoluminescence and high resolution X-ray diffraction.
机译：当前正在研究将高载流子迁移率材料集成到未来的CMOS中，以增加驱动电流能力并降低下一代CMOS器件的功耗。如果Ⅲ-Ⅴ材料是n型沟道器件的候选材料，则基于锑化物的半导体具有高空穴迁移率，可用于量子阱器件的p型沟道。在这项工作中，我们首先研究了GaSb和InAs外延层上的钝化和接触电阻等构造块，以便为量子阱器件定义最佳异质结构。在第二部分中，我们重点研究了用“ 6.1”半导体制成的复杂异质结构的生长研究，以及用TEM进行界面工程的重要性。最后，通过光致发光和高分辨率X射线衍射研究了优化的量子阱堆叠的性质。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    C. Merckling; A. Alian; X. Sun; A. Firrinceli; J. Dekoster; M. Caymax; M. Heyns;

  • 作者单位

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium;

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium,Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven, Belgium;

    Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven, Belgium,Department of Electrical Engineering, Yale University, New Haven, CT 06520-8284, USA;

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium;

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium;

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium;

    Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven, Belgium,Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven, Belgium;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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