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首页> 外文会议>Physics and technology of high-k materials 9 >Structural, Optical and Electrical Properties of Thin Films of Lanthanum Aluminum Oxide Synthesized by Spray Pyrolysis
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Structural, Optical and Electrical Properties of Thin Films of Lanthanum Aluminum Oxide Synthesized by Spray Pyrolysis

机译：喷雾热解法合成氧化铝氧化铝薄膜的结构，光电性能

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摘要

The structural, optical and electrical properties of spray pyrolysis deposited lanthanum aluminum oxide are reported. The films were deposited from a spraying solutions of lanthanum nitrate and aluminum acetylacetonate in N, N- dimethylformamide using an ultrasonic generator on (100) Si substrates. The substrate temperature was in the 550-650℃ range. The thickness was below 300 A. The optical band gap was 5.3 eV, and the refractive index at 630 run was up to 1.62 depending of the relation lanthanum-aluminum. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements of metal-oxide-semiconductor (MOS) structures incorporating them. A dielectric constant in the 6-12 range, interface states density of the order of 10~(12) X 1/eV cm~2 as well as breakdown fields higher than 3 MV/cm were determine in this way.
机译：报道了喷雾热解沉积镧氧化铝的结构，光学和电学性质。使用超声发生器将硝酸镧和乙酰丙酮铝在N，N-二甲基甲酰胺中的喷涂溶液沉积在（100）Si基板上。基板温度在550-650℃范围内。厚度低于300A。光学带隙为5.3 eV，取决于镧铝的关系，在630 run处的折射率最高为1.62。薄膜的电学特性是根据包含它们的金属氧化物半导体（MOS）结构的电容和电流与电压的关系来确定的。用这种方法测定介电常数在6-12范围内，界面态密度约为10〜（12）X 1 / eV cm〜2，击穿场高于3 MV / cm。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    A.N Meza-Rocha; E. Zaleta-Alejandre; R. Balderas; Z. Rivera; M.L Perez-Arrieta; C. Falcony;

  • 作者单位

    Department of physics, CINVESTAV-IPN Apartado Postal 14-740, Mexico DF 07000, Mexico;

    Department of physics, CINVESTAV-IPN Apartado Postal 14-740, Mexico DF 07000, Mexico;

    Department of physics, CINVESTAV-IPN Apartado Postal 14-740, Mexico DF 07000, Mexico;

    Department of physics, CINVESTAV-IPN Apartado Postal 14-740, Mexico DF 07000, Mexico;

    Unidad Academica de Ffsica, Universidad Autonoma de Zacatecas Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac., Mexico;

    Department of physics, CINVESTAV-IPN Apartado Postal 14-740, Mexico DF 07000, Mexico;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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