Aluminium Oxide Atomic Layer Deposition on Semiconductor Substrates

机译：半导体基板上的氧化铝原子层沉积

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Al_2O_3 Atomic Layer Deposition (ALD) on semiconductor substrates finds potential applications in CMOS devices, memory devices, solar cells, etc. In this paper, we study the TMA/H_2O ALD of Al_2O_3 on Si, Ge and GaAs substrates. Total reflection X-Ray Fluorescence (TXRF) is used to investigate the growth-percycle evolution during the early ALD reaction cycles. TXRF demonstrates growth inhibition from the second reaction cycle on many substrates, including conventionally used fully hydroxylated SiO_2. Theoretical calculations, based on Density Functional Theory, indicate the formation of electron deficient bonds at the Al_2O_3/semiconductor interface, by interaction between neighboring monomethyl aluminium surface species. Both experiment and theory thus indicate that the surface chemistry of Al_2O_3 ALD of is more complex than previously described.

机译：半导体衬底上的Al_2O_3原子层沉积（ALD）在CMOS器件，存储设备，太阳能电池等中发现了潜在的应用。在本文中，我们研究了Si，Ge和GaAs衬底上的Al_2O_3的TMA / H_2O ALD。全反射X射线荧光（TXRF）用于研究早期ALD反应周期中生长周期的演变。 TXRF在许多底物（包括常规使用的完全羟基化的SiO_2）上显示出从第二反应循环开始的生长抑制作用。基于密度泛函理论的理论计算表明，Al_2O_3 /半导体界面通过相邻单甲基铝表面物质之间的相互作用形成了缺电子键。因此，实验和理论均表明，Al_2O_3 ALD的表面化学比以前描述的更为复杂。

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《Physics and technology of high-k materials 9》|2011年|p.149-160|共12页
会议地点 Boston MA(US);Boston MA(US)
作者
A. Delabie; S. Sioncke; J. Rip; S. Van Elshocht; G. Pourtois; M. Mueller; B.Beckhoff; K. Pierloot;
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Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium,Chemistry Department, PLASMANT, University of Antwerp, Universiteitsplein 1, B- 2610, Wilrijk, Belgium;

Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany;

Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany;

Chemistry Departement, University of Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium;

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中图分类半导体技术;
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Aluminium Oxide Atomic Layer Deposition on Semiconductor Substrates

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