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Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-κ MOS Nonvolatile Memories

机译：光对nc-ZnO嵌入式ZrHfO高κMOS非易失性存储器的电荷陷阱和去陷阱的影响

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MOS capacitors containing the nanocrystalline ZnO embedded Zr doped HfO_2 high-k gate dielectric film integrated with the indium tin oxide gate electrode have been fabricated and characterized under the dark and light exposure conditions for nonvolatile memory properties. When measured in dark, the capacitor had a large charge storage capacity showing a counterclockwise capacitance-voltage hysteresis. When exposed to the light, the memory capacity was increased. The generation and transfer of electrons and holes in and from the nanocrystalline ZnO under the light exposure condition are responsible for the memory window change and charge retention characteristics.

机译：已经制造了包含与铟锡氧化物栅电极集成的纳米晶ZnO嵌入的Zr掺杂的HfO_2高k栅介电膜的MOS电容器，并在黑暗和光暴露条件下表征了其非易失性存储特性。当在黑暗中测量时，该电容器具有大的电荷存储容量，显示出逆时针的电容电压迟滞。当暴露在光线下时，存储容量增加了。在曝光条件下，纳米晶体ZnO中电子和空穴的产生和转移与存储窗口的变化和电荷保持特性有关。

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《Physics and technology of high-k materials 9》|2011年|p.93-100|共8页
会议地点 Boston MA(US);Boston MA(US)
作者
Bmgqing Luo; Chen-Han Lin; Yue Kuo;
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作者单位

Thin Film Nano Microelectronics Research Laboratory Texas AM University, College Station, TX 77843-3122;

Thin Film Nano Microelectronics Research Laboratory Texas AM University, College Station, TX 77843-3122;

Thin Film Nano Microelectronics Research Laboratory Texas AM University, College Station, TX 77843-3122;

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正文语种 eng
中图分类半导体技术;
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1. Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories [J] . Chia-Han Yang Yue Kuo and Chen-Han Lin Applied Physics Letteres . 2010,第19期

机译：用于非易失性存储器的纳米晶氧化锌嵌入锆掺杂的氧化ha高k电介质的电荷去俘获和介电击穿
2. Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories [J] . Chia-Han Yang, Yue Kuo, Chen-Han Lin Applied Physicsletters . 2010,第19期

机译：用于非易失性存储器的纳米晶氧化锌嵌入锆掺杂的氧化ha高k电介质的电荷去俘获和介电击穿
3. Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-k Nonvolatile Memory Functions [J] . Chi-Chou Lin, Yue Kuo ECS Journal of Solid State Science and Technology . 2013,第1期

机译：温度对纳米氧化钼嵌入ZrHfO高k非易失性存储功能的影响
4. Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-k MOS Nonvolatile Memories [C] . Bingqing Luo, Chen-Han Lin, Yue Kuo International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice . 2011

机译：NC-ZnO嵌入式Zrhfo高K MOS NONVOLATILE记忆的电荷诱捕和脱击的光效应
5. Design, characterization and modeling of charge trapping nonvolatile semiconductor memory devices. [D] . Eichenlaub, Nathan. 2009

机译：电荷捕获非易失性半导体存储器件的设计，表征和建模。
6. Transistor Memory: 45‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory (Adv. Sci. 12/2018) [O] . Yang Yu, Lin‐Yi Bian, Jian‐Guo Chen, 2018

机译：晶体管存储器：45-二氮杂芴基供体-受体小分子作为可调非易失性有机晶体管存储器的电荷俘获元件（Adv。Sci。12/2018）
7. Nanocrystalline MoOx Embedded ZrHfO High k Memories Charge Trapping and Retention Characteristics [O] . Xi Liu, Chia-han Yang, Yue Kuo, 2016

机译：纳米晶moOx嵌入ZrHfO高k存储器电荷捕获和保留特性

Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-κ MOS Nonvolatile Memories

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