Fabrication of III-V semiconductor quantum dots

机译：III-V半导体量子点的制造

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We propose a method for the fabrication of self-assembled semiconductor quantum dots (QDs) and the control of their density and emission wavelength. This method would be fundamental toward the fabrication of nanophotonic devices. We used molecular beam epitaxy and fabricated self-assembled QDs from various materials under various growth conditions. We controlled the emission wavelength over a wide range (700-1700 nm) by changing the materials around the QDs. We used antimonide-related materials or a highly stacked structure to control the density of the obtained QDs within the range of 10~8-10~(13)/cm~2.

机译：我们提出了一种用于制造自组装半导体量子点（QD）以及控制其密度和发射波长的方法。该方法将是制造纳米光子器件的基础。我们使用了分子束外延技术，并在各种生长条件下由各种材料制成了自组装QD。通过改变量子点周围的材料，我们将发射波长控制在很宽的范围内（700-1700 nm）。我们使用与锑化物有关的材料或高度堆叠的结构，将获得的量子点的密度控制在10〜8-10〜（13）/ cm〜2的范围内。

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来源
《Plasmonics: Nanoimaging, nanofabrication, and their applications V》|2009年|P.739507.1-739507.10|共10页
会议地点 San Diego CA(US)
作者
Kouichi Akahane; rnNaokatsu Yamamoto;
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作者单位

National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan;

rnNational Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
quantum dot; self-assembling; III-V semiconductor; optical near-field interaction;

机译：量子点自组装III-V半导体;光学近场相互作用;

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专利

1. Quantum beat phenomenon due to polariton in III-V and IV-IV semiconductors doped with quantum dot [J] . Singh MR., Mukheji D. Physica, E. Low-dimensional systems & nanostructures . 2003,第1a4期

机译：掺杂量子点的III-V和IV-IV半导体中由于极化引起的量子拍频现象
2. Fabrication and optical study of quantum dots, quantum wires and quantum wells of II-VI diluted magnetic semiconductors [J] . N. Takahashi, K. Takabayashi, E. Shirado Journal of Crystal Growth . 2000,第期

机译：II-VI稀释磁性半导体的量子点，量子线和量子阱的制造和光学研究
3. Fabrication and optical study of quantum dots, quantum wires and quantum wells of Ⅱ-Ⅵ diluted magnetic semiconductors [J] . N. Takahashi, K. Takabayashi, E. Shirado, Journal of Crystal Growth . 2000,第期

机译：Ⅱ-Ⅵ稀磁半导体的量子点，量子线和量子阱的制备和光学研究
4. The burstein-moss shift in quantum dots of III-V, II-VI and IV-VI semiconductors under parallel magnetic field [C] . Kamakhya P.Ghatak, P.K.Bose, Gautam Majumder, Symposium on infrared applications of semiconductors . 1998

机译：在平行磁场下III-V，II-VI和IV-VI和IV-VI半导体的量子点中的Burstein-Moss转移
5. Quantum dot quantum computation in III-V type semiconductor. [D] . Prabhakar, Sanjay Kumar. 2010

机译：3-5型半导体量子点的计算。
6. Quantum Dots: Single Halide Perovskite/Semiconductor Core/Shell Quantum Dots with Ultrastability and Nonblinking Properties (Adv. Sci. 18/2019) [O] . Xiaosheng Tang, Jie Yang, Shiqi Li, 2019

机译：量子点：具有超稳定性和非闪烁特性的单卤化物钙钛矿/半导体核/壳量子点（Adv。Sci。18/2019）
7. Optical characterisation of III-V semiconductor quantum dots and quantum dot structures [O] . Ashmore Adam Dennis 2004

机译：III-V半导体量子点和量子点结构的光学表征
8. Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics. [R] . Ringel, S., Grassman, T., Saving, J. P. 2014

机译：用于先进空间光伏的量子点嵌入式III-V半导体的生长和缺陷表征。

Fabrication of III-V semiconductor quantum dots

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