首页> 外文会议>第七届国际耐火材料学术会议(ISR2016)论文集 >Effect of Temperature Schedule on The Morphology of SiC Made from Graphite and Silicon Powder
【24h】

Effect of Temperature Schedule on The Morphology of SiC Made from Graphite and Silicon Powder

机译:温度安排对石墨和硅粉制成的SiC形态的影响

获取原文
获取原文并翻译 | 示例

摘要

SiC whiskers were synthesized in coke bed using a two-step heat treatment process.The temperature was held for 3 h at 1200℃ before heating to 1430℃ for 3 h.The morphologies of SiC synthesized by the two-step heat treatment method were much more different from those produced by direct heating to 1430℃.SiC whiskers formed at 1200℃ firstly and grew at 1430℃ to obtain a mean diameter about 326 nm, while the SiC grains with a size range from 0.70 to 2.30μm were obtained by direct heating to the target temperature of 1430℃.This was explained by different formation mechanism.The result proposes a promising alternative technical process for whisker-reinforced ceramic/refractory composites in-situ during sintering.
机译:SiC晶须通过两步热处理工艺在焦炭床中合成。将温度在1200℃下保持3 h,然后加热到1430℃3 h。通过两步热处理法合成的SiC的形貌很多与直接加热至1430℃时产生的晶须不同。SiC晶须首先在1200℃时形成,并在1430℃时生长,获得平均直径约326 nm,而直接晶须获得的晶粒尺寸为0.70至2.30μm。加热到1430℃的目标温度。这是由不同的形成机理解释的。结果为烧结过程中原位晶须增强的陶瓷/耐火复合材料提出了一种有希望的替代技术工艺。

著录项

  • 来源
  • 会议地点
  • 作者单位

    The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China;

    The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China;

    The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China;

    The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China;

    The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;冶金工业;
  • 关键词

    silicon carbide; whiskers; microstructure; formation mechanism;

    机译:碳化硅;晶须;显微组织;形成机理;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号