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首页> 外文会议>Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices >(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A
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(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

机译：浅图案InP（311）A上的（In，Ga）As侧壁量子线

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摘要

We have fabricated quasi-planar (In,Ga)As sidewall quantum wires (QWires) along [01-1] mesa stripes on shallow-patterned InP (311)A substrates by chemical beam epitaxy (CBE). The stracrural analysis by cross-sectional scanning tunneling microscopy (X-STM) revealed thickness increase and In enhancement close to the mesa sidewall, which has been precisely evaluated by micro-photoluminescence (micro-PL) spectroscopy. The QWires embedded in InP and lattice-matched, quaternary (Ga,In)(As,P) barrier layers revealed narrow PL linewidths, high PL efficiency, and large lateral carrier confinement energies. The QWires have been stacked in growth direction with identical PL peak energies. The emission energy of the QWires has been controlled by the (In,Ga)As layer thickness and the height of the patterned mesa stripes. Room temperature PL emission centered at 1.55 μm has been demonstrated for stacked QWires embedded in (Ga,In)(As,P) barriers with clear polarization anisotropy associated with the lateral quantum confinement. Hence, the potential of (In,Ga)As sidewall QWires on shallow-patterned InP (311)A substrates for photonic devices operating in the 1.55 μm telecommunication wavelength region is established.
机译：我们通过化学束外延（CBE）在浅图案的InP（311）A衬底上沿[01-1]台面条纹制造了准平面（In，Ga）As侧壁量子线（QWires）。通过横截面扫描隧道显微镜（X-STM）进行的结构分析显示厚度增加，并且靠近台面侧壁的In增强，已通过微光致发光（micro-PL）光谱进行了精确评估。嵌入InP和晶格匹配的四级（Ga，In）（As，P）势垒层的QWire显示出窄的PL线宽，高PL效率和较大的横向载流子约束能量。 QWire已沿生长方向堆叠，具有相同的PL峰值能量。 QWire的发射能量已由（In，Ga）As层厚度和图案化台面条纹的高度控制。对于嵌入在（Ga，In）（As，P）势垒中的堆叠QWire，具有与横向量子限制相关的清晰极化各向异性的叠层QWire，已经证明了以1.55μm为中心的室温PL发射。因此，建立了在工作于1.55μm电信波长区域的光子器件的浅图案InP（311）A衬底上的（In，Ga）As侧壁QWire的电势。

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