首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >NUCLEATION AND GROWTH OF HETERO-EPITAXIAL YBa_2Cu_3O_x AT THE BURIED PRECURSOR/SUBSTRATE INTERFACE
【24h】

NUCLEATION AND GROWTH OF HETERO-EPITAXIAL YBa_2Cu_3O_x AT THE BURIED PRECURSOR/SUBSTRATE INTERFACE

机译:埋藏的前驱体/基质界面中异外延YBa_2Cu_3O_x的形核和生长

获取原文
获取原文并翻译 | 示例

摘要

The so-called BaF_2 process, which is a postdeposition reaction process for thick YBa_2Cu_3O_7, YBCO, films, is extensively studied for the development of YBCO conductors for electric-system applications. It is shown here that the nucleation and the growth process of hetero-epitaxial YBCO on single crystalline and textured substrates is very unique compared with other ex situ growth processes such as sol gel processes for the fabrication of epitaxial oxide films. Since the latter process is limited to the growth of very thin films (~100 nm) and requires very high temperatures (> 1000℃), it is suggested that the same principle for the BaF_2 process for YBCO films be used to grow thick films of other functional oxides.
机译:所谓的BaF_2工艺是对厚的YBa_2Cu_3O_7(YBCO)薄膜进行后沉积反应的工艺,已被广泛研究以开发用于电气系统的YBCO导体。此处显示,与其他异位生长工艺(例如用于制造外延氧化膜的溶胶凝胶工艺)相比,异质外延YBCO在单晶和纹理化衬底上的成核和生长工艺非常独特。由于后一种工艺仅限于非常薄的薄膜(〜100 nm)的生长,并且需要非常高的温度(> 1000℃),因此建议将BaF_2工艺用于YBCO薄膜的相同原理用于生长厚膜。其他功能性氧化物。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号