Special Boundaries in Thin Films from Degenerate Epitaxy, Coincidence Epitaxy and Grain Growth

机译：简并外延，重合外延和晶粒生长中薄膜的特殊边界

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When an overgrowth film crystal is of a lower symmetry than the substrate crystal, a finite number (n) of differently oriented island-nuclei develop. This number (n) is the ratio of the corresponding symmetry indices. The upper limit of the number of distinct misorentations (m) across boundaries in the film is determined as m=C(n,2). This phenomenon of degenerate epitaxy is observed in the double positioning of the [111] f.c.c. metal films on MoS_2 with (112) twin boundaries, and the triple positioning of the tetragonal YBa_2Cu_3O_(7-x) (YBCO) on lattice-matched cubic SrTiO_3 with 90°-boundaries of Σ3.

机译：当过生长的薄膜晶体的对称性低于基底晶体的对称性时，会形成有限数量（n）取向不同的岛核。该数字（n）是相应的对称指数的比率。跨膜边界的明显错位的数量（m）的上限确定为m ＝ C（n，2）。在[111] f.c.c的双重定位中观察到了这种简并外延现象。在具有（112）孪晶边界的MoS_2上沉积金属膜，并将四边形YBa_2Cu_3O_（7-x）（YBCO）在具有Σ3的90°边界的晶格匹配立方SrTiO_3上进行三重定位。

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《Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US)》|2003年|P.323-345|共23页
会议地点 OrlandoFL(US)
作者
Siu-Wai Chan; Jack W.H. Tsai;
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Columbia University, NY, NY;

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正文语种 eng
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Special Boundaries in Thin Films from Degenerate Epitaxy, Coincidence Epitaxy and Grain Growth

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