• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Proceedings vol.2004-13; International Symposium on Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications; ; >Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures
【24h】

Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures

机译：InAs / InGaAs量子点纳米结构中应变驱动调谐发射能的光学研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on photoreflectance (PR) measurements in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K of InAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The QDs are embedded in a In_(.15)Ga_(0.85)As lower confining layer (LCL) with thickness ranging from 20 to 360 nm and in a 20 nm thick upper confining layer with the same composition, that we assume to be pseudomorphic to the LCL. The structures were previously characterized by spectroscopic ellipsometry, photo-luminescence and atomic force microscopy. PR spectra show clear and well-resolved spectral features due to both the QD ground-state transitions and the interband transitions between the topmost split valence bands and the lowest conduction band of LCLs. This allows to self-consistently study the effects on the QD emission energy of parameters such as thickness and composition of partially-relaxed LCLs, that determine the QD strain amount and the QD-CL band discontinuities. In this work, these two contributions to the tuning of the QD emission energy are separated by comparing experimental results to that calculated by means of a simple and yet valuable model for ground-state transitions in QDs. It is proved that QD strain (related to the CL-QD lattice-mismatch determined by the thickness-dependent LCL strain-relaxation) can be effectively used to tune the QD emission energy at room-temperature, in particular in the 1.3 μm window.
机译：我们报告了在0.8-1.5 eV光子能量范围内以及在80至300 K的原子层分子束外延生长的InAs自组装量子点（QD）的温度下的光反射（PR）测量结果。 QD嵌入厚度范围为20至360 nm的In _（。15）Ga_（0.85）As下限制层（LCL）和相同组成的20 nm厚的上限制层中，我们假定是伪晶到拼箱。先前通过光谱椭圆偏振，光致发光和原子力显微镜对结构进行了表征。由于QD基态跃迁以及LCL的最高分裂价带与最低导带之间的带间跃迁，PR谱显示出清晰且可分辨的光谱特征。这允许自洽地研究参数（例如，部分松弛的LCL的厚度和成分）对QD发射能量的影响，这些参数确定了QD应变量和QD-CL谱带不连续性。在这项工作中，通过将实验结果与通过简单而有价值的量子点基态跃迁模型计算得出的结果进行比较，从而分离了这两种对量子点发射能量调节的贡献。事实证明，QD应变（与由厚度相关的LCL应变松弛确定的CL-QD晶格失配有关）可以有效地用于调节室温下的QD发射能量，特别是在1.3μm窗口中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号