TEMPERATURE INFLUENCES ON THE DRAIN LEAKAGE CURRENT BEHAVIOR IN GRADED-CHANNEL SOI nMOSFETS

机译：温度对梯度沟道SON MOSFET漏漏电流行为的影响

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Experimental and simulations analyzes were done in Graded-Channel ( GC ) SOI nMOSFETs in order to study the drain leakage current behavior in these devices when operating from room temperature ( 300K ) up to 573K. It was noticed that drain leakage current depends strongly on the ratio between the length of the lowly doped region and the mask channel length. All discussions presented are based on experimental and numerical bidimensional simulations results.

机译：为了研究这些器件在室温（300K）至573K范围内工作时的漏漏电流行为，在梯度沟道（GC）SOI nMOSFET中进行了实验和仿真分析。注意到漏极漏电流在很大程度上取决于低掺杂区的长度与掩模沟道长度之间的比率。提出的所有讨论均基于实验和数值二维模拟结果。

著录项

来源
《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.548-556|共9页
会议地点
作者
Marcello Bellodi; Joao Antonio Martino;
展开▼
作者单位

Centro Universitario da FEI, Departamento de Eletricidade, Av. Humberto de Alencar Castelo Branco n°. 3972, Sao Bernardo do Campo, SP, Postal Code 09850-901, Brazil;

Laboratborio de Sistemas Integraveis, Universidade de Sao Paulo - LSI // PSI / USP, Sao;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Leakage Drain Current Behavior in an Accumulation Mode SOI p-Channel MOSFET Operating at High Temperatures [J] . M.Bellodiz, J.A.Martino Electrochemical and solid-state letters . 1999,第7期

机译：在高温下工作的累积模式SOI p沟道MOSFET的漏电流行为
2. Hot-carrier effects on gate-induced-drain-leakage (GIDL) current in thin-film SOI/NMOSFET's [J] . Binglong Zhang, Balasinski A. IEEE Electron Device Letters . 1994,第5期

机译：热载流子对薄膜SOI / NMOSFET的栅极感应漏极泄漏（GIDL）电流的影响
3. Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures [J] . Michelly de Souza, Denis Flandre, Marcelo Antonio Pavanello Cryogenics . 2009,第11期

机译：分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器
4. TEMPERATURE INFLUENCES ON THE DRAIN LEAKAGE CURRENT BEHAVIOR IN GRADED-CHANNEL SOI nMOSFETS [C] . Marcello Bellodi, Joao Antonio Martino International Symposium on Microelectronics Technology and Devices . 2005

机译：对等级通道SOI NMOSFET中排水泄漏电流行为的温度影响
5. Study on the leakage current behavior and conduction mechanism of porous low-k in copper/porous low-k interconnects: The influence of extrinsic factors. [D] . Chen, Liangshan. 2010

机译：铜/多孔低k互连中多孔低k的泄漏电流行为和传导机理的研究：外在因素的影响。
6. Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses [O] . Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, 2020

机译：了解温度和漏极电流应力在具有不同有源层厚度的InSnZnO TFT中的作用
7. Characteristics and physical mechanisms of positive bias and temperature stressinduced drain current degradation in HfSiON nMOSFETs [O] . Chien-tai Chan, Student Member, Chun-jung Tang, 2006

机译：HfsiON nmOsFET中正偏压和温度应力引起漏极电流退化的特性和物理机制
8. Gate-Induced Drain Leakage Current in MOS Devices [R] . Nathan, V., Das, N. C. 1993

机译：mOs器件中栅极引漏漏电流

TEMPERATURE INFLUENCES ON THE DRAIN LEAKAGE CURRENT BEHAVIOR IN GRADED-CHANNEL SOI nMOSFETS

摘要

著录项

相似文献

相关主题

期刊订阅